Secondary defect formation in bonded silicon-on-insulator after boron implantation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 459-462

  Saavedra, A F ^a   King, A C ^a   Jones, K S ^a   Jones, E C ^b   Chan, K K ^c  

^a University of Florida   (United States)

^b Oregon State University   (United States)

^c IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DIFFUSION; ETCHING; INTERFACES (MATERIALS); ION IMPLANTATION; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

INTERSTITIAL CLUSTERS; THERMAL PROCESSING; TRANSIENT ENHANCED DIFFUSION (TED);

SILICON ON INSULATOR TECHNOLOGY;

EID: 1642355194     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1640656     Document Type: Conference Paper

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