Comparison of {311} Defect Evolution in SIMOX and Bonded SOI Materials

Journal of the Electrochemical Society

Volumn 151, Issue 4, 2004, Pages

  Saavedra, A F ^a   Jones, K S ^a   Law, M E ^a   Chan, K K ^b  

^a University of Florida   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DEFECTS; DOPING (ADDITIVES); MATHEMATICAL MODELS; MICROSTRUCTURE; SILICON WAFERS; SUBSTRATES; THERMAL EXPANSION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

INTERSTITIAL POPULATION; PLANT-VIEW TRANSMISSION ELECTRON MICROSCOPY (PTEM); SILICON/BURIED OXIDE (BOX);

SILICON ON INSULATOR TECHNOLOGY;

EID: 2042537998     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1651531     Document Type: Article

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