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Volumn 195, Issue 8, 2008, Pages 847-888

Three-dimensional integration in microelectronics: Motivation, processing, and thermomechanical modeling

Author keywords

BCB bonding; Grain boundary migration; Grain continuum modeling; Three dimensional integration; Through silicon vias

Indexed keywords

CONTINUUM MECHANICS; GRAIN BOUNDARIES; INTEGRATION; MICROPROCESSOR CHIPS; SEMICONDUCTING SILICON; THREE DIMENSIONAL;

EID: 43149092706     PISSN: 00986445     EISSN: 15635201     Source Type: Journal    
DOI: 10.1080/00986440801930302     Document Type: Review
Times cited : (40)

References (90)
  • 2
    • 0035902690 scopus 로고    scopus 로고
    • Thermomechanical behavior of different texture components in Cu thin films
    • Baker, S. P., Kretschmann, A. and Arzt, E. (2001) Thermomechanical behavior of different texture components in Cu thin films. Acta Mater., 49, pp. 2145-2160.
    • (2001) Acta Mater. , vol.49 , pp. 2145-2160
    • Baker, S.P.1    Kretschmann, A.2    Arzt, E.3
  • 4
    • 43149125282 scopus 로고    scopus 로고
    • A computational framework for modeling grain structure development in three dimensions
    • Ph.D. diss., Dept. of Chemical and Biological Engineering, Rensselaer Polytechnic Institute
    • Bloomfield, M. O. (2007) A computational framework for modeling grain structure development in three dimensions, Ph.D. diss., Dept. of Chemical and Biological Engineering, Rensselaer Polytechnic Institute
    • (2007)
    • Bloomfield, M.O.1
  • 5
    • 4544295210 scopus 로고    scopus 로고
    • Formation and evolution of grain structure in thin films
    • Bloomfield, M. O. and Cale, T. S. (2004) Formation and evolution of grain structure in thin films. Microelectron. Eng., 76:1, pp. 195-204.
    • (2004) Microelectron. Eng. , vol.76 , Issue.1 , pp. 195-204
    • Bloomfield, M.O.1    Cale, T.S.2
  • 6
    • 0348221888 scopus 로고    scopus 로고
    • A computational framework for modeling grain structure evolution in three-dimensions
    • Bloomfield, M. O., Richards, D. F. and Cale, T. S. (2003) A computational framework for modeling grain structure evolution in three-dimensions. Philos. Mag., 83:31, pp. 3549-3568.
    • (2003) Philos. Mag. , vol.83 , Issue.31 , pp. 3549-3568
    • Bloomfield, M.O.1    Richards, D.F.2    Cale, T.S.3
  • 10
    • 34548851427 scopus 로고    scopus 로고
    • Thermally induced stresses in 3D-IC inter-wafer interconnects: A combined grain-continuum and continuum approach
    • Bloomfield, M. O., Bentz, D. N., Lu, J. -Q., Gutmann, R. J. and Cale, T. S. (2007) Thermally induced stresses in 3D-IC inter-wafer interconnects: A combined grain-continuum and continuum approach. Microelectron. Eng., 84, pp. 2750-2756.
    • (2007) Microelectron. Eng. , vol.84 , pp. 2750-2756
    • Bloomfield, M.O.1    Bentz, D.N.2    Lu, J.-Q.3    Gutmann, R.J.4    Cale, T.S.5
  • 11
    • 38549098519 scopus 로고    scopus 로고
    • Stress induced grain boundary migration in polycrystalline copper
    • Bloomfield, M. O., Bentz, D. N. and Cale, T. S. (2008) Stress induced grain boundary migration in polycrystalline copper. J. Electron. Mater., 37, pp. 249-263.
    • (2008) J. Electron. Mater. , vol.37 , pp. 249-263
    • Bloomfield, M.O.1    Bentz, D.N.2    Cale, T.S.3
  • 12
    • 43149109833 scopus 로고    scopus 로고
    • Bower, C. A., Garrou, P. E., Ramm, P. and Takahashi, K. Materials Research Society, Pittsburgh
    • Bower, C. A., Garrou, P. E., Ramm, P. and Takahashi, K. (2007) Enabling Technologies for 3-D Integration, Materials Research Society, Pittsburgh
    • (2007) Enabling Technologies for 3-D Integration
  • 15
    • 0019009450 scopus 로고
    • Fracture toughness of silicon
    • Chen, C. P. and Leipold, M. H. (1980) Fracture toughness of silicon. Am. Ceram. Soc. Bull., 59, pp. 469-472.
    • (1980) Am. Ceram. Soc. Bull. , vol.59 , pp. 469-472
    • Chen, C.P.1    Leipold, M.H.2
  • 16
    • 0037065038 scopus 로고    scopus 로고
    • Microstructure evolution and abnormal grain growth during copper wafer bonding
    • Chen, K. N., Fan, A., Tan, C. S. and Reif, R. (2002) Microstructure evolution and abnormal grain growth during copper wafer bonding. Appl. Phys. Lett., 81:20, pp. 3774-3776.
    • (2002) Appl. Phys. Lett. , vol.81 , Issue.20 , pp. 3774-3776
    • Chen, K.N.1    Fan, A.2    Tan, C.S.3    Reif, R.4
  • 20
    • 43149088143 scopus 로고    scopus 로고
    • (2007)
    • (2007)
  • 23
    • 0033687377 scopus 로고    scopus 로고
    • Wafer level chip scale packaging (WL-CSP): An Overview
    • Garrou, P. (2000) Wafer level chip scale packaging (WL-CSP): An Overview. IEEE Trans. Adv. Packaging, 23:2, pp. 198-205.
    • (2000) IEEE Trans. Adv. Packaging , vol.23 , Issue.2 , pp. 198-205
    • Garrou, P.1
  • 33
    • 43149113549 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors Edition
    • International Technology Roadmap for Semiconductors 2005 Edition
    • (2005)
  • 35
    • 43149088375 scopus 로고    scopus 로고
    • Bonding for hyperintegration through wafer stacking
    • Ph.D. diss., Dept. of Chemical and Biological Engineering, Rensselaer Polytechnic Institute
    • Kwon, Y. (2003) Bonding for hyperintegration through wafer stacking, Ph.D. diss., Dept. of Chemical and Biological Engineering, Rensselaer Polytechnic Institute
    • (2003)
    • Kwon, Y.1
  • 37
    • 18344373109 scopus 로고    scopus 로고
    • Thermal cycling effects on critical adhesion energy and residual stress in benzocyclobutene (BCB)-bonded wafers
    • Kwon, Y., Seok, J., Lu, J. -Q., Cale, T. S. and Gutmann, R. J. (2005) Thermal cycling effects on critical adhesion energy and residual stress in benzocyclobutene (BCB)-bonded wafers. J. Electrochem. Soc., 152:4, pp. G286-G294.
    • (2005) J. Electrochem. Soc. , vol.152 , Issue.4
    • Kwon, Y.1    Seok, J.2    Lu, J.-Q.3    Cale, T.S.4    Gutmann, R.J.5
  • 38
    • 33644812081 scopus 로고    scopus 로고
    • Critical adhesion energy of benzocyclobutene (BCB)-bonded wafers
    • Kwon, Y., Seok, J., Lu, J. -Q., Cale, T. S. and Gutmann, R. J. (2006) Critical adhesion energy of benzocyclobutene (BCB)-bonded wafers. J. Electrochem. Soc., 153:4, pp. G347-G352.
    • (2006) J. Electrochem. Soc. , vol.153 , Issue.4
    • Kwon, Y.1    Seok, J.2    Lu, J.-Q.3    Cale, T.S.4    Gutmann, R.J.5
  • 57
    • 43149095908 scopus 로고    scopus 로고
    • CMP compatibility of partially cured benzocyclobutene (BCB) for a via-first 3D IC process
    • Materials Research Society, Warrendale, Penn
    • McMahon, J. J., Niklaus, F., Kumar, R. J., Yu, J., Lu, J. -Q. and Gutmann, R. J. (2005) CMP compatibility of partially cured benzocyclobutene (BCB) for a via-first 3D IC process, pp. W4.4.1-W4.4.6. Materials Research Society, Warrendale, Penn
    • (2005)
    • McMahon, J.J.1    Niklaus, F.2    Kumar, R.J.3    Yu, J.4    Lu, J.-Q.5    Gutmann, R.J.6
  • 60
    • 0002701650 scopus 로고    scopus 로고
    • Benzocyclobutene (DVS-BCB) polymer as an interlayer dielectric (ILD) material
    • Mills, M. E., Townsend, P., Castillo, D., Martin, S. and Achen, A. (1997) Benzocyclobutene (DVS-BCB) polymer as an interlayer dielectric (ILD) material. Microelectron. Eng., 33:1, pp. 327-334.
    • (1997) Microelectron. Eng. , vol.33 , Issue.1 , pp. 327-334
    • Mills, M.E.1    Townsend, P.2    Castillo, D.3    Martin, S.4    Achen, A.5
  • 62
    • 33646236322 scopus 로고    scopus 로고
    • Three-dimensional wafer stacking via Cu-Cu bonding integrated with 65-nm strained-Si/low-k CMOS technology
    • Morrow, P., Park, C. -M., Ramanathan, S., Kobrinsky, M. J. and Harmes, M. (2006) Three-dimensional wafer stacking via Cu-Cu bonding integrated with 65-nm strained-Si/low-k CMOS technology. IEEE Electron Devices Lett., 27:5, pp. 335-337.
    • (2006) IEEE Electron Devices Lett. , vol.27 , Issue.5 , pp. 335-337
    • Morrow, P.1    Park, C.-M.2    Ramanathan, S.3    Kobrinsky, M.J.4    Harmes, M.5
  • 64
    • 33644802186 scopus 로고    scopus 로고
    • Adhesive wafer bonding using partially cured benzocyclobutene (BCB) for three-dimensional integration
    • Niklaus, F., Kumar, R. J., McMahon, J. J., Yu, J., Lu, J. -Q., Cale, T. S. and Gutmann, R. J. (2006) Adhesive wafer bonding using partially cured benzocyclobutene (BCB) for three-dimensional integration. J. Electrochem. Soc., 153:4, pp. G291-G295.
    • (2006) J. Electrochem. Soc. , vol.153 , Issue.4 , pp. 291-295
    • Niklaus, F.1    Kumar, R.J.2    McMahon, J.J.3    Yu, J.4    Lu, J.-Q.5    Cale, T.S.6    Gutmann, R.J.7
  • 66
    • 30144445476 scopus 로고    scopus 로고
    • Effect of film thickness on the evolution of annealing texture in sputtered copper films
    • Park, N. J., Field, D. P., Nowell, M. M. and Besser, P. R. (2005) Effect of film thickness on the evolution of annealing texture in sputtered copper films. J. Electron. Mater., 34:12, pp. 1500-1508.
    • (2005) J. Electron. Mater. , vol.34 , Issue.12 , pp. 1500-1508
    • Park, N.J.1    Field, D.P.2    Nowell, M.M.3    Besser, P.R.4
  • 67
    • 33947407658 scopus 로고    scopus 로고
    • Three-dimensional integrated circuits and the future of system-on-chip designs
    • Patti, R. (2006) Three-dimensional integrated circuits and the future of system-on-chip designs. Proc. IEEE, 94:6, pp. 1214-1222.
    • (2006) Proc. IEEE , vol.94 , Issue.6 , pp. 1214-1222
    • Patti, R.1
  • 68
    • 0002228943 scopus 로고
    • Cleavage strength of polycrystals
    • Petch, N. J. (1953) Cleavage strength of polycrystals. J. Iron Steel Inst., 174, pp. 25-28.
    • (1953) J. Iron Steel Inst. , vol.174 , pp. 25-28
    • Petch, N.J.1
  • 87
    • 0000692416 scopus 로고    scopus 로고
    • Modeling and characterization of polycrystalline-silicon thin-film transistors with a channel-length comparable to a grain size
    • Yamaguchi, K. (2001) Modeling and characterization of polycrystalline-silicon thin-film transistors with a channel-length comparable to a grain size. J. Appl. Phys., 89, pp. 590-595.
    • (2001) J. Appl. Phys. , vol.89 , pp. 590-595
    • Yamaguchi, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.