Strain energy driven and curvature driven grain boundary migration in 3D-IC Cu vias

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 41-44

  Awo Affouda, Chaffra A ^a   Bloomfield, Max O ^a,b   Cale, Timothy S ^a,b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Process Evolution   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUUM MECHANICS; GRAIN BOUNDARIES; MODEL STRUCTURES; SEMICONDUCTOR DEVICES; STRAIN ENERGY; TIMING CIRCUITS;

COMSOL MULTIPHYSICS; CONTINUUM MODEL; GRAIN BOUNDARY MIGRATIONS; LOCAL MEAN; POLYCRYSTALLINE; STRESS VALUES; THERMALLY INDUCED STRAIN; THERMO-MECHANICAL;

THREE DIMENSIONAL INTEGRATED CIRCUITS;

EID: 84901319689     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_10     Document Type: Conference Paper

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