Atomic-scale simulations of electron mobilities in ultrathin SOI MOSFETs

ECS Transactions

Volumn 6, Issue 4, 2007, Pages 353-362

  Pantelides, Sokrates T ^a,b   Hadjisavvas, G ^a   Evans, M H ^a,d   Tsetseris, L ^a   Caussanel, M ^c,e   Schrimpf, R D ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d LOCKHEED MARTIN   (United States)

^e UNIVERSITÉ DE PERPIGNAN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; HAFNIUM OXIDES; KINETIC ENERGY; KINETICS; LOW-K DIELECTRIC; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; SILICA; SILICON OXIDES; WAVE FUNCTIONS;

ATOMIC SCALE ROUGHNESS; ATOMIC-SCALE MODEL; ATOMIC-SCALE SIMULATIONS; QUANTUM-MECHANICAL CALCULATION; SCATTERING POTENTIALS; SEMI-CLASSICAL APPROXIMATION; SI-SIO2 INTERFACES; STRAIN INDUCED ENHANCEMENT;

SILICON ON INSULATOR TECHNOLOGY;

EID: 41549166883     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728882     Document Type: Conference Paper

References (33)

1. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
2. M. V. Fischetti, and S. E. Laux, Phys. Rev. B 48, 2244 (1993).
3. C. Jiacoboni and L. Reggiani, Rev. Mod. Phys 44, 645 (1983);
4. M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988);
5. IEEE Electron Devices 38, 650 (1991);
6. W. Wagner, J. Stat. Phys. 66, 1011 (1992).
7. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 41, 2357 (1994).
8. I. Polishchuk, and C. Hu, VLSI Technology Digest of Technical Papers, 51 (2001); D. Mounteanu and J. L. Autran, Solid State Electron. 47, 1219 (2003);
9. D Esseni, IEEE Trans. Electron Dev. 51, 394 (2004).
10. M. V. Fischetti, F. Gamiz, and W. Hansen, J. Appl. Phys. 92, 7320 (2002).
11. K. Uchida, J. Koga, and S. Takagi, IEDM Technical Digest, 805 (2003);
12. D. Esseni et al., IEEE Electron Dev, 50, 802 (2003);
13. D. Esseni and A. Sangiorgi, Solid State Electron. 48, 927 (2004).
14. M. H. Evans, X.-G. Zhang, J. D. Joannopoulos, and S. T. Pantelides, Phys. Rev. Lett. 95, 106802 (2005).
15. M. H. Evans, M. Caussanel, R. D. Schrimpf, and S. T. Pantelides, IEDM Tech. Digest, 597 (2005)
16. M. H. Evans, M. Caussanel, R. D. Schrimpf, and S. T. Pantelides, Proceedings of 11th International Workshop on Computational Electronics (IWCE 11), Vienna, Austria, May 2006 [J. Comp. Electron, in press].
17. G. Hadjisawas, L. Tsetseris, and S. T. Pantelides, to be published.
18. R. Buczko, S. J. Pennycook, and S. T. Pantelides, Phys. Rev. Lett. 84, 943 (2000).
19. M. C. Payne, M. P. Teter, D. C. Allan, T. A. Anas, and J. D. Joannopoulos, Rev. Mod. Phys. 64, 1045 (1992).
20. G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, and H. J. Herzog, Phys. Rev. Lett. 54, 2441 (1985).
21. M. T Currie, C. W. Leitz, T. A. Langdo, G. Taraschi, E. A. Fitzgerald, and D. A. Antoniadis, J. Vac. Sci. Technol. B 19, 2268 (2001).
22. K. Rim, J. L. Hoyt, and J. F. Gibbons, IEEE Trans. Electron Devices 47, 1406 (2000).
23. K. Rim et al., VLSI Technology Digest of Technical Papers, 98 (2002)
24. K. Rim et al., Solid-State Electron 47, 1133 (2003).
25. N. Sugii, D. Hisamoto, K. Washio, N. Yokoyama, and S. Kimura, IEEE Trans. Electron Devices 49, 2237 (2002).
26. S. H. Olsen et al., IEEE Trans. Electron Devices 50, 1961 (2002).
27. T. Mizuno, N. Sugiyama, T Tezuka, T Numata, and S. Takagi, IEEE Trans. Electron Devices 50, 988 (2003).
28. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B 38, 6084 (1988).
29. L. Tsetseris, and S. T Pantelides, Phys. Rev. Lett. 97, 116101 (2006).
30. F. Stern and W E Howard, Phys. Rev 163, 816 (1967);
31. F. Stern, Phys. Rev. B 5, 4891 (1972)
32. M. G. Ancona, and H. F. Tiersten, Phys. Rev. B 35, 7959 (1987).
33. M. G. Ancona and G. J. Iafrate, Phys. Rev. B 39, 9536 (1989)