Electron transport in engineered substrates: Strain, orientation, and channel/insulator material effects

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 33-44

  Fischetti, M V ^a   Narayanan, S ^a   O'Regan, T ^a   Sachs, U ^a  

^a University of Massachusetts Amherst   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CAPACITY; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; STRAIN MEASUREMENT; SUBSTRATES; ZENER EFFECT;

DENSITY OF STATES; ELECTRONIC TRANSPORT; STRAIN ORIENTATIONS; ZENER LEAKAGE;

ELECTRON MOBILITY;

EID: 33847003386     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355792     Document Type: Conference Paper

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