High-field electron mobility in biaxially-tensile strained SOI: Low temperature measurement and correlation with the surface morphology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 134-135

  Bonno, O ^a   Barraud, S ^a   Andrieu, F ^a   Mariolle, D ^a   Rochette, F ^a,b   Casse M ^a   Hartmann, J M ^a   Bertin, F ^a   Faynot, O ^a  

^a CEA LETI   (France)

^b MINATEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRICAL ENGINEERING; ELECTRON MOBILITY; MICROSCOPIC EXAMINATION; MOSFET DEVICES; SCANNING PROBE MICROSCOPY; SILICON; SURFACE ROUGHNESS; TEMPERATURE MEASUREMENT;

ATOMIC FORCE MICROSCOPY (AFM); EFFECTIVE FIELDS; HIGH FIELDS; LOW TEMPERATURE (LT) MEASUREMENT; MOBILITY ENHANCEMENT; PHYSICAL MECHANISMS; STRAINED-SOI (SSOI); VLSI TECHNOLOGIES; WIDE-RANGE;

IMAGING TECHNIQUES;

EID: 42749096566     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339757     Document Type: Conference Paper

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