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Volumn 17, Issue 11, 2007, Pages 1109-1116

A low valent metalorganic precursor for the growth of tungsten nitride thin films by atomic layer deposition

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; FILM THICKNESS; GROWTH (MATERIALS); HYDROGEN; TUNGSTEN COMPOUNDS;

EID: 41449105944     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/b610873c     Document Type: Article
Times cited : (27)

References (56)
  • 56
    • 41449094074 scopus 로고    scopus 로고
    • AugerScan V3.0.1, RBD Enterprises, Inc., 2437 NE Twin Knolls Drive, Suite 2, Bend, OR 97701, USA
    • AugerScan V3.0.1, RBD Enterprises, Inc., 2437 NE Twin Knolls Drive, Suite 2, Bend, OR 97701, USA


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.