Characterization of Atomic Layer Deposited WNxCy Thin Film as a Diffusion Barrier for Copper Metallization

Journal of the Electrochemical Society

Volumn 151, Issue 4, 2004, Pages

  Kim, Soo Hyun ^a,c   Oh, Su Suk ^a   Kim, Hyun Mi ^a   Kang, Dae Hwan ^a   Kim, Ki Bum ^a   Li, Wei Min ^b   Haukka, Suvi ^b   Tuominen, Marko ^b  

^a Seoul National University   (South Korea)

^b ASM Microchemistry Oy   (Finland)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; DIFFUSION IN SOLIDS; METALLIZING; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; PHYSICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; ATOMIC LAYER DEPOSITION (ALD); DIFFUSION BARRIERS; PRECURSORS;

ELECTRODEPOSITION;

EID: 2042505699     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1652054     Document Type: Article

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