Diffusion barrier properties of metalorganic chemical vapor deposition -WNx compared with other barrier materials

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages 2375-2379

  Lee, Brad H ^a   Yong, Kijung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ASPECT RATIO; CHEMICAL MECHANICAL POLISHING; DIELECTRIC PROPERTIES; DIFFUSION IN SOLIDS; EVAPORATION; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SPUTTER DEPOSITION; X RAY DIFFRACTION ANALYSIS;

BARRIER PROPERTIES; DIFFUSION BARRIERS; STEP COVERAGE; X RAY DIFFRACTION PATTERNS;

TUNGSTEN COMPOUNDS;

EID: 9744231392     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1792239     Document Type: Article

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