Meeting the Cu diffusion barrier challenge using ALD tungsten nitride carbide

Solid State Technology

Volumn 48, Issue 6, 2005, Pages 54-58

  Koh, Wonyong ^a,f   Kumar, Devendra ^b   Li, Wei Min ^c   Sprey, Hessel ^d   Raaijmakers, Ivo J ^e  

^a ASM Japan KK   (Japan)

^b ASM America Inc   (United States)

^c ASM Microchemistry Oy   (Finland)

^d ASM BELGIUM   (Belgium)

^e ASM International NV   (Netherlands)

^f ASM Japan K K   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; COPPER DIFFUSION; FILM DEPOSITION; TUNGSTEN NITRIDE CARBIDE (WNC);

DIFFUSION; ELECTRIC POWER SYSTEM INTERCONNECTION; ELECTRIC RESISTANCE; LOW TEMPERATURE EFFECTS; NITRIDES; SEMICONDUCTOR DEVICE MANUFACTURE; TUNGSTEN;

PHYSICAL VAPOR DEPOSITION;

EID: 21644457984     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (10)

1. International Technology Roadmap for Semiconductors, 2003; http://www.itrs.net/public/.
2. y Thin Films by ALCVD Method for Diffusion Barriers in Metallization," Proc. IEEE IITC, pp. 191-193, 2002.
3. y," Solid State Technology, Vol. 46, No. 7, pp. 103-106, 2003.
4. y as a Copper Diffusion Barrier," Proc. IEEE IITC, pp. 135-137, 2003.
5. y as a Cu Barrier in Oxide and Porous Low-k Dual Damascene Structures," AMC2003, Vol. 19, pp. 729-735, 2004.
6. y Barriers," Proc. IEEE IITC, pp. 12-14, 2004.
7. y Thin Films as Diffusion Barrier for Copper Metallization," Appl. Phys. Lett. 82(25), pp. 4486-4488, 2003.
8. y Thin Film as a Diffusion Barrier for Copper Metallization," J. Electrochem. Soc., Vol. 151, No. 4, pp. C272-C282, 2004.
9. y," CD-ROM of ALD 2004 Conf.
10. H. Park, W. Koh, S.-M. Choi, K.-C. Park, H.-K. Kang, et al., "Superfilling CVD of Copper Using a Catalytic Surfactant," Proc. IEEE IITC, pp. 12-14, 2001.