Development of PECVD WNx ultrathin film as barrier layer for copper metallization

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 261-268

  Ecke, R ^a   Schulz, S E ^a   Hecker, M ^b   Gessner, T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b IFW DRESDEN   (Germany)

Author keywords

Chemical vapor deposition; Diffusion barrier; Tungsten nitride

Indexed keywords

AMORPHOUS FILMS; COMPOSITION; COPPER; DIFFUSION; ELECTRIC CONDUCTIVITY; METALLIZING; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TUNGSTEN COMPOUNDS;

DIFFUSION BARRIER;

ULTRATHIN FILMS;

EID: 0036776665     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00798-0     Document Type: Conference Paper

References (7)