Cl4(PhCN)W(NPh) as a single-source MOCVD precursor for deposition of tungsten nitride (WNx) thin films

Journal of Organometallic Chemistry

Volumn 684, Issue 1-2, 2003, Pages 338-350

  Bchir, Omar J ^a   Green, Kelly M ^a   Hlad, Mark S ^a   Anderson, Timothy J ^a   Brooks, Benjamin C ^b   Wilder, Corey B ^b   Powell, David H ^b   McElwee White, Lisa ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b University of Florida   (United States)

Author keywords

Chemical vapor deposition; Diffusion barrier; Imido; Nitride; Tungsten

Indexed keywords

BENZENE DERIVATIVE; CARBON; IMIDE; NITROGEN; NITROGEN DERIVATIVE; TUNGSTEN DERIVATIVE;

ARTICLE; CHEMICAL BOND; CHEMICAL REACTION KINETICS; CONTROLLED STUDY; DISSOCIATION; ELECTRIC RESISTANCE; ENERGY; FILM; FRAGMENTATION REACTION; GROWTH RATE; INTERMETHOD COMPARISON; MASS SPECTROMETRY; NITROGEN DEPOSITION; PRECURSOR; TEMPERATURE SENSITIVITY;

EID: 0142120417     PISSN: 0022328X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-328X(03)00769-1     Document Type: Article

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