A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6359-6362

  SIM, Hyun Sang ^a,b   Kim, Seong Il ^a   Jeon, Hyeongtag ^b   Kim, Yong Tae ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Atomic layer deposition; Diffusion barrier; Remote plasma; Tungsten nitride

Indexed keywords

AMMONIA; ANNEALING; ELECTRIC VARIABLES MEASUREMENT; GRAIN BOUNDARIES; METALLIZING; SILICA; SILICON WAFERS; SURFACE TREATMENT; TUNGSTEN COMPOUNDS; VLSI CIRCUITS;

DIFFUSION BARRIERS; PULSE PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PPALD); REMOTE PLASMA;

THIN FILMS;

EID: 0346959659     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6359     Document Type: Article

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