Effect of gas mixing ratio on MgO etch behaviour in inductively coupled BCl3/Ar plasma

Vacuum

Volumn 79, Issue 3-4, 2005, Pages 231-240

  Kim, Gwan Ha ^a   Kim, Chang Il ^a   Efremov, Alexander M ^b  

^a Chung Ang University   (South Korea)

^b IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

Author keywords

Dissociation; Electron temperature; Etch rate; Ion assisted etching; MgO

Indexed keywords

CARRIER CONCENTRATION; DISSOCIATION; ETCHING; INDUCTIVELY COUPLED PLASMA; MAGNESIUM COMPOUNDS; PLASMA DIAGNOSTICS; REACTION KINETICS; SOL-GELS; SPIN COATING;

ELECTRON TEMPERATURE; ETCHING KINETICS; ION-ASSISTED ETCHING; MGO THIN FILMS;

THIN FILMS;

EID: 22544469460     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.03.012     Document Type: Article

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