Comment on "Plasma etching of high dielectric constant materials on silicon in halogen plasma chemistries" by L. Sha and J. P. Chang [J. Vac. Sci. Technol. A 22, 88 (2004)]

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 4, 2005, Pages 720-721

  Stafford, Luc ^a   Margot, Joëlle ^a  

^a UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; HAFNIUM COMPOUNDS; ION BOMBARDMENT; PERMITTIVITY; PLASMA ETCHING;

ADSORBATE; ETCHING CHARACTERISTICS; SURFACE REGION;

ZIRCONIUM COMPOUNDS;

EID: 31044449328     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1938980     Document Type: Review

References (6)

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3. J. P. Chang and H. H. Sawin, J. Vac. Sci. Technol. B 19, 1319 (2001).
4. J. Ding and N. Hershkowitz, Appl. Phys. Lett. 68, 1619 (1996).
5. P. C. Zalm, J. Appl. Phys. 54, 2660 (1983).
6. C. Steinbrüchel, Appl. Phys. Lett. 55, 1960 (1989).