Characteristics of inductively coupled Cl2/BCl3 plasmas during GaN etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 2214-2219

  Kim, H S ^a   Yeom, G Y ^a   Lee, J W ^b   Kim, T I ^b  

^a Sungkyunkwan University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL DESORPTION; ETCH PRODUCTS; ETCH RATES; INDUCTIVELY-COUPLED; PHYSICAL SPUTTERING; PLASMA MASS SPECTROMETRY; REACTIVE ION;

CHEMISORPTION; DESORPTION; ELECTROMAGNETIC INDUCTION; ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; IONS; MASS SPECTROMETRY; PLASMAS;

CHLORINE;

EID: 0001456802     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581749     Document Type: Conference Paper

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