Defect generation statistics in thin gate oxides

IEEE Transactions on Electron Devices

Volumn 51, Issue 8, 2004, Pages 1288-1295

  Ielmini, Daniele ^a   Spinelli, Alessandro S ^b   Lacaita, Andrea L ^a,c   van Duuren, Michiel J ^d  

^a POLITECNICO DI MILANO   (Italy)

^b UNIVERSITY OF INSUBRIA   (Italy)

^c IFN CNR   (Italy)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PROBABILITY; STATISTICAL METHODS;

DEFECT GENERATION; STRESS INDUCED LEAKAGE CURRENT; THIN GATE OXIDES;

FLASH MEMORY;

EID: 3943048667     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.832104     Document Type: Article

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