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Volumn , Issue , 2002, Pages 167-170

Drain-accelerated degradation of tunnel oxides in Flash memories

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CHARGE; ELECTRIC POTENTIAL; FLASH MEMORY; OXIDES;

EID: 0036932374     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (14)

References (8)
  • 1
    • 0023829362 scopus 로고
    • Reliability performance of ETOX based Flash memories
    • G. Verma and N. Mielke, "Reliability performance of ETOX based Flash memories", Proc. IRPS, 158-166, 1988.
    • (1988) Proc. IRPS , pp. 158-166
    • Verma, G.1    Mielke, N.2
  • 2
    • 0026836308 scopus 로고
    • Substrate injection induced program disturb - A new reliability consideration for Flash-EPROM arrays
    • A. Roy, R. Kazerounian, A. Kablanian and B. Eitan, "Substrate injection induced program disturb - a new reliability consideration for Flash-EPROM arrays", Proc. IRPS, 68-75, 1992
    • (1992) Proc. IRPS , pp. 68-75
    • Roy, A.1    Kazerounian, R.2    Kablanian, A.3    Eitan, B.4
  • 3
    • 0025578960 scopus 로고
    • Lucky-hole injection induced by band-to-band tunneling leakage in stacked gate transistors
    • K. Yoshikawa et al., "Lucky-hole injection induced by band-to-band tunneling leakage in stacked gate transistors" IEDM Tech. Dig., 577-580, 1990.
    • (1990) IEDM Tech. Dig. , pp. 577-580
    • Yoshikawa, K.1
  • 4
    • 0025672517 scopus 로고
    • Drain-avalanche induced hole injection and generation of interface traps in thin oxides MOS devices
    • R. Rakkhit, S. Haddad, C. Chang and J. Yue, "Drain-avalanche induced hole injection and generation of interface traps in thin oxides MOS devices", Proc. IRPS, 150-153 (1990)
    • (1990) Proc. IRPS , pp. 150-153
    • Rakkhit, R.1    Haddad, S.2    Chang, C.3    Yue, J.4
  • 5
    • 0035483517 scopus 로고    scopus 로고
    • Automated test equipment for research on nonvolatile memories
    • P. Pellati and P. Olivo, "Automated test equipment for research on nonvolatile memories", IEEE Trans. Instrum. Meas., 50, 1162-1166, 2001.
    • (2001) IEEE Trans. Instrum. Meas. , vol.50 , pp. 1162-1166
    • Pellati, P.1    Olivo, P.2
  • 7
    • 0027306901 scopus 로고
    • Novel read-disturb failure mechanism induced by FLASH cycling
    • A. Brand, K. Wu, S. Pan, and D. Chin, "Novel read-disturb failure mechanism induced by FLASH cycling", Proc. IRPS, 127-132, 1993
    • (1993) Proc. IRPS , pp. 127-132
    • Brand, A.1    Wu, K.2    Pan, S.3    Chin, D.4
  • 8
    • 0036089046 scopus 로고    scopus 로고
    • A new reliability model for post-cycling charge retention of Flash memories
    • H. P. Belgal et al., "A new reliability model for post-cycling charge retention of Flash memories", Proc. IRPS, 7-20, 2002.
    • (2002) Proc. IRPS , pp. 7-20
    • Belgal, H.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.