Statistical profiling of SILC spot in flash memories

IEEE Transactions on Electron Devices

Volumn 49, Issue 10, 2002, Pages 1723-1728

  Ielmini, Daniele ^b   Spinelli, Alessandro S ^a,c   Lacaita, Andrea L ^a,b   Visconti, Angelo ^d  

^a IEEE

^b POLITECNICO DI MILANO   (Italy)

^c UNIVERSITY OF INSUBRIA   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

EPROM; Failure analysis; Leakage currents; Reliability testing

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRON TUNNELING; FAILURE ANALYSIS; FLASH MEMORY; LEAKAGE CURRENTS; OXIDES; RELIABILITY; STRESSES; THRESHOLD VOLTAGE;

CHANNEL-HOT-ELECTRON INJECTION; DRAIN BIASING; FOWLER-NORDHEIM TUNNELING; PROGRAM ERASE OPERATION; STRESS-INDUCED LEAKAGE CURRENT;

STATISTICAL TESTS;

EID: 0036773233     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.803636     Document Type: Article

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