Detailed observation of small leak current in flash memories with thin tunnel oxides

IEEE Transactions on Semiconductor Manufacturing

Volumn 12, Issue 2, 1999, Pages 170-174

  Manabe, Yukiko ^a   Okuyama, Kousuke ^a   Kubota, Katsuhiko ^a   Nozoe, Atsushi ^a   Karashima, Tetsuji ^a   Ujiie, Kazuaki ^a   Kanno, Hiroyuki ^a   Nakashima, Moriyoshi ^b   Ajika, Natsuo ^b  

^a HITACHI LTD   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; OXIDES; SEMICONDUCTOR STORAGE; THRESHOLD VOLTAGE; ULTRAVIOLET RADIATION;

FLASH MEMORIES; FLOATING GATE CHARGE UP; TUNNEL OXIDES;

ELECTRIC CURRENT MEASUREMENT;

EID: 0033360385     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.762874     Document Type: Article

References (5)

1. S. Yamada, K. Amemiya, T. Yamane, H. Hazama, and K. Hashimoto, "Non-uniform current flow through thin oxide after Fowler-Nordheim current stress," in Proc. IEEE Conf. Int. Reliability Physics Symp., 1996, pp. 108-112.
2. N. Naruke, S. Taguchi, and M. Wada, "Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness," in IEDM Tech. Dig., 1988, pp. 424-427.
3. R. Moazzami and C. Hu, "Stress-induced current in thin silicon dioxide films," in IEDM Tech. Dig., 1992, pp. 139-142.
4. E. F. Runnion, S. M. Gladstone IV, R. S. Scott, D. J. Dumin, L. Lie, and J. Mitros, "Limitation on oxide thickness in FLASH EEPROM applications," in Proc. IEEE Conf. Int. Reliability Physics Symp., 1996, pp. 93-99.
5. E. Rosenbaum and L. F. Register, " Mechanism of stress-induced leakage current in MOS capacitors," IEEE Trans. Electron Devices, vol. 44, pp. 317-323, Feb. 1997.