Microscopic and statistical approach to SILC characteristics - exponential relation between distributed Fowler Nordheim coefficients and its physical interpretation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 196-197

  Tsuji, Naoki ^a   Sakakibara, Kiyohiko ^a   Ajika, Natsuo ^a   Miyoshi, Hirokazu ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MICROSCOPIC EXAMINATION; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS;

STRESS-INDUCED LEAKAGE CURRENTS (SILC);

LEAKAGE CURRENTS;

EID: 0031624232     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)