A detailed investigation of the quantum yield experiment

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1696-1702

  Ielmini, Daniele ^b   Spinelli, Alessandro S ^a,c   Lacaita, Andrea L ^a,b   DiMaria, Donelli J ^e   Ghidini, Gabriella ^d  

^a IEEE   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c UNIVERSITY OF INSUBRIA   (Italy)

^d STMICROELECTRONICS   (Italy)

^e NONE

Author keywords

Impact ionization; Leakage current; MOS devices

Indexed keywords

HIGH-ENERGY OXIDE TRAPS; OXIDE DEFECT DISTRIBUTION; QUANTUM YIELD EXPERIMENT; STRESS-INDUCED LEAKAGE CURRENT; TRAP-ASSISTED TUNNELING;

ANODES; COMPUTER SIMULATION; ELECTRON TUNNELING; HIGH ENERGY PHYSICS; IMPACT IONIZATION; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOS DEVICES; MOSFET DEVICES; OXIDES;

QUANTUM THEORY;

EID: 0035424260     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936691     Document Type: Article

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