Experimental Method for the Determination of the Energy Distribution of Stress-Induced Oxide Traps

IEEE Electron Device Letters

Volumn 20, Issue 3, 1999, Pages 106-108

  Spinelli, Alessandro S ^a   Lacaita, Andrea L ^b   Rigamonti, Matteo ^b   Ghidini, Gabriella ^c  

^a UNIVERSITY OF INSUBRIA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; SEMICONDUCTOR GROWTH; STRESS ANALYSIS;

ENERGY DISTRIBUTION; OXIDE TRAPS;

ULSI CIRCUITS;

EID: 0033097001     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.748903     Document Type: Article

References (16)

1. 2 interface observed by Fowler-Nordheim tunneling," J. Appl. Phys., vol. 53, pp. 559-567, 1982.
2. S. Satoh, G. Hemink, K. Hatakeyama, and S. Aritome, "Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics," IEEE Trans. Electron Devices, vol. 45, pp. 482-486, Feb. 1998.
3. D. J. DiMaria and E. Cartier, "Mechanism for stress-induced leakage currents in thin silicon dioxide films," J. Appl. Phys., vol. 78, pp. 3883-3894, 1995.
4. E. Rosenbaum and L. F. Register, "Mechanism of stress-induced leakage current in MOS capacitors," IEEE Trans. Electron Devices, vol. 44, pp. 317-323, Feb. 1997.
5. Y. H. Lin, C. L. Lee, and T. F. Lei, "Monitoring trapped charge generation for gate oxide under stress," IEEE Trans. Electron Devices, vol. 44, pp. 1441-1446, Sept. 1997.
6. R. Moazzami and C. Hu, "Stress-induced current in thin silicon dioxide films," in IEDM Tech. Dig., 1992, pp. 139-142.
7. D. J. Dumin and J. R. Maddux, "Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides," IEEE Trans. Electron Devices, vol. 40, pp. 986-993, May 1993.
8. R. S. Scott and D. J. Dumin, "The superposition of transient low-level leakage currents in stressed silicon oxides," Solid-State Electron., vol. 38, pp. 1325-1328, 1995.
9. R. S. Scott, N. A. Dumin, T. W. Hughes, D. J. Dumin, and B. T. Moore, "Properties of high-voltage stress generated traps in thin silicon oxide," IEEE Trans. Electron Devices, vol. 43, pp. 1133-1142, July 1996.
10. R. S. Scott and D. J. Dumin, "The charging and discharging of high-voltage stress-generated traps in thin silicon oxide," IEEE Trans. Electron Devices, vol. 43, pp. 130-136, Jan. 1996.
11. S. Manzini and A. Modelli, "Tunneling discharge of trapped holes in silicon dioxide," in Insulating Films on Semiconductors. Amsterdam, The Netherlands: Elsevier Science, 1983, pp. 112-115.
12. Z. A. Weinberg, "On tunneling in metal-oxide-silicon structures," J. Appl. Phys., vol. 53, pp. 5052-5056, 1982.
13. I. Lundström and C. Svensson, "Tunneling to traps in insulators," J. Appl. Phys., vol. 43, pp. 5045-5047, 1972.
14. R. Degraeve, J. D. Blauwe, J. L. Ogier, P. Roussel, G. Groeseneken, and H. E. Maes, "A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides," in IEDM Tech. Dig., 1996, pp. 327-330.
15. T. Arakawa and R. Matsumoto, "Impact of nitrogen concentration profile in silicon oxynitride films on stress-induced leakage current," Appl. Surf. Sci., vols. 113/114, pp. 605-609, 1997.
16. D. J. DiMaria and J. H. Stathis, "Trapping and trap creation studies on nitrided and reoxidized-nitrided silicon dioxide films on silicon," J. Appl. Phys., vol. 70, pp. 1500-1509, 1991.