A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 189-195

  Ielmini, D ^a   Spinelli, A S ^b   Lacaita, A L ^a   Modelli, A ^c  

^a POLITECNICO DI MILANO   (Italy)

^b UNIVERSITY OF INSUBRIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

Flash cells; Stress induced leakage current; Two trap tunneling model

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; ELECTRON TUNNELING; LEAKAGE CURRENTS;

ANOMALOUS CELLS; STRESS-INDUCED LEAKAGE CURRENTS (SILC);

FLASH MEMORY;

EID: 0035498499     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00621-9     Document Type: Conference Paper

References (10)