Epitaxial AlN thin film surface acoustic wave devices prepared on GaN/sapphire using low-temperature helicon sputtering system

Japanese Journal of Applied Physics

Volumn 47, Issue 1, 2008, Pages 124-129

  Kao, H L ^a   Chen, W C ^a   Chien, Wei Cheng ^a   Lin, Hui Feng ^a   Chen, Tzu Chien ^a   Lin, Chung Yi ^a   Lin, Y T ^a   Chyi, J I ^b   Hsu, C H ^c  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

AlN; GaN; Helicon sputtering; Humidity effects; SAW filter; Temperature coefficient of frequency (TCF)

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ALUMINUM COMPOUNDS; ENVIRONMENTAL IMPACT; HELICONS; SAPPHIRE; SPUTTERING;

AMBIENT STABILITY; HELICON SPUTTERING; HUMIDITY EFFECTS; TEMPERATURE COEFFICIENT;

EPITAXIAL FILMS;

EID: 38549092523     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.124     Document Type: Article

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