The study of preferred orientation growth of aluminum nitride thin films on ceramic and glass substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1526-1529

  Kao, H L ^a   Shih, P J ^a   Lai, Chun Hsi ^a  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

Aluminum nitride; Reactive rf sputtering

Indexed keywords

ATOMIC FORCE MICROSCOPY; CERAMIC MATERIALS; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; FILM GROWTH; GLASS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

ALUMINUM NITRIDE; CRYSTALLINITY; TOTAL SPUTTERING PRESSURE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032662994     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1526     Document Type: Article

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