Textured and smooth AlN films prepared by Helicon sputtering system

Electronics Letters

Volumn 37, Issue 4, 2001, Pages 253-255

  Wu, C H ^a   Chiu, W Y ^a   Kao, H L ^a  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ALUMINUM NITRIDE; MAGNETRON SPUTTERING; MORPHOLOGY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR PLASMAS; SURFACE ROUGHNESS; SURFACES;

ALUMINUM NITRIDE FILMS; HELICON SPUTTERING SYSTEM; ROOT MEAN SQUARE ROUGHNESS; WURTZITE HEXAGONAL STRUCTURE;

FILM PREPARATION;

EID: 6644230063     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010124     Document Type: Article

References (8)

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2. KISHI, M., SUZUKI, M., and OGAWA, K.: 'Low-temperature synthesis of aluminum nitride film by HCD-type ion plating', Jpn. J. Appl. Phys. 1, 1992. 31, pp. 1153-1159
3. 3 as the nitrogen-sources for AIN crystal-growth by metalorganic chemical vapor-deposition', Thin Solid Films, 1991, 204, pp. 115-121
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7. CHENG. CHIEN-CHUAN, CHEN. YING-CHUNG, WANG, HORNG-JWO, and CHEN, WEN-RONG: 'Morphology and structure of aluminum nitride thin films on glass substrates', Jpn. J. Appl. Phys. 1, 1996, 35, pp. 1880-1885
8. KAO, H.L., SHIN, P.J., and LAI, CHUN-HIS: 'The study of preferred orientation growth of aluminum nitride thin films on ceramic and glass substrates', Jpn. J. Appl. Phys., 1999, 38, pp. 1526-1529