Temperature dependence of surface acoustic wave characteristics of GaN layers on sapphire substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 16-19, 2005, Pages

  Nishimura, Kazumi ^a   Shigekawa, Naoteru ^a   Yokoyama, Haruki ^a   Hohkawa, Kohji ^b  

^a NTT CORPORATION   (Japan)

^b KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaN; Propagation direction; Sapphire; SAW; Surface acoustic wave; TCD; Thermal coefficient of delay

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; SAPPHIRE; SUBSTRATES;

PROPAGATION DIRECTION; TEMPERATURE DEPENDENCE; THERMAL COEFFICIENT OF DELAY;

GALLIUM NITRIDE;

EID: 24344446673     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L564     Document Type: Article

References (7)

1. S. J. Pearton, J. C. Zolper, R. J. Shul and F. Ren: J. Appl. Phys. 86 (1999) 1.
2. O. Ambacher: J. Phys. D 31 (1998) 2653.
3. S.-H. Lee, H.-H. Jeong, S.-B. Bae, H.-Choi, J.-H. Lee and Y.-H. Lee: IEEE Trans. Electron Devices 48 (2001) 524.
4. H.-H. Jeong, S.-K. Kim, Y.-C. Jung, H.-C. Choi, J.-H. Lee and Y.-H. Lee: Phys. Status Solidi A 188 (2001) 1 247.
5. T. W. Grudkowski and M. Gilden: Appl. Phys. Lett. 38 (1981) 412.
6. K. Uehara, C. M. Yang, H. Nakamura, S. Kaneda, H. Nakase and K. Tsubouchi: Proc. 2002 IEEE Ultrasonics Symp. (2002) p. 135.
7. K. Tsubouchi and N. Mikoshiba: IEEE Trans. Sonics and Ultrasonics 32 (1985) 634.