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Volumn 39, Issue 23, 2003, Pages 1691-1693

Synthesis and SAW characteristics of AlN thin films fabricated on Si and GaN using helicon sputtering system

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SPUTTERING; THIN FILMS;

EID: 0344549824     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031088     Document Type: Article
Times cited : (10)

References (8)
  • 5
    • 0035279239 scopus 로고    scopus 로고
    • Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss
    • Lee, S.-H., and Jeong, H.-H.: 'Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss', IEEE Trans. Electron Devices, 2001, 48, pp. 524-529
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 524-529
    • Lee, S.-H.1    Jeong, H.-H.2
  • 6
    • 0032662994 scopus 로고    scopus 로고
    • The study of preferred orientation growth of aluminum nitride thin films on ceramic and glass substrates
    • Kao, H.L., Shih, P.J., and Lai, Chun-Hsi.: 'The study of preferred orientation growth of aluminum nitride thin films on ceramic and glass substrates', Jpn. J. Appl. Phys., 1999, 38, pp. 1526-1529
    • (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 1526-1529
    • Kao, H.L.1    Shih, P.J.2    Lai, C.-H.3
  • 7
    • 0036873205 scopus 로고    scopus 로고
    • 3 plate with a laser ultrasound technique
    • 3 plate with a laser ultrasound technique', Jpn. J. Appl. Phys., 2002, 41, pp. 6478-6483
    • (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 6478-6483
    • Yang, C.H.1    Huang, M.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.