Synthesis and surface acoustic wave properties of AlN thin films fabricated on (001) and (110) sapphire substrates using chemical vapor deposition of AlCl3-NH3 system

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 5 A, 1997, Pages 2837-2842

  Kaya, Kiyoshi ^a   Takahashi, Hiroshi ^a   Shibata, Yoshihiko ^a   Kanno, Yasuhito ^a   Hirai, Toshio ^b  

^a ASAHI CHEMICAL INDUSTRY CO   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

AIN; Chemical vapor deposition; Crystal orientation; Oxygen impurity content; Piezoelectricity; Surface acoustic wave properties; Temperature coefficient of the center frequency

Indexed keywords

ALUMINUM NITRIDE THIN FILMS; SURFACE ACOUSTIC WAVE PROPERTIES;

ACOUSTIC WAVE VELOCITY; AMMONIA; CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; FILM PREPARATION; NITRIDES; PIEZOELECTRICITY; SAPPHIRE; SURFACE WAVES; SYNTHESIS (CHEMICAL); THIN FILMS;

ALUMINUM COMPOUNDS;

EID: 0031143946     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2837     Document Type: Article

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