Epitaxially grown GaN thin-film SAW filter with high velocity and low insertion loss

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 524-529

  Lee, Suk Hun ^a   Jeong, Hwan Hee ^a   Bae, Sung Bum ^a   Choi, Hyun Chul ^a   Lee, Jung Hee ^a   Lee, Yong Hyun ^a  

^a Kyungpook National University   (South Korea)

Author keywords

GaN; MOCVD; SAW filter; TCF

Indexed keywords

ACOUSTIC WAVE VELOCITY; BANDWIDTH; GALLIUM NITRIDE; INSERTION LOSSES; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PIEZOELECTRIC MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE ROUGHNESS; TEMPERATURE MEASUREMENT; THIN FILMS;

ELECTROMECHANICAL COUPLING; SAPPHIRE SUBSTRATES;

ACOUSTIC SURFACE WAVE FILTERS;

EID: 0035279239     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906446     Document Type: Article

References (19)

1. 1.5GHz Low-loss surface acoustic wave filter using ZnO/sapphire structure
2. GHz SAW quartz transversal filters
3. 3 substrate
4. High-coupling and high-velocity SAW using ZnO and AlN films on a glass substrate
5. Characterization of ZnO piezoelectric films prepared by rf planar-magnetron sputtering
6. Studies of optimum conditions for growth of rf-sputtered ZnO films
7. Elastic properties of Zinc-blende and Wurtzite AlN, GaN, and InN
8. Pyroelectric and piezoelectric properties of GaN-based materials
9. GaN, AlN, and InN: A review
10. Acoustic surface properties of epitaxially grown aluminum nitride and gallium nitride on sapphire
11. Preparation of aluminum nitride thin films by reactive sputtering and their application to GHz-band surface acoustic wave devices
12. Hole compensation mechanism of p-type GaN films
13. 3 substrates
14. Propagation properties of longitudinal leaky surface waves on lithium tetraborate
15. Piezoelectric material for acoustic wave applications
16. 1-xN thin film obtained by surface acoustic-wave measurements
17. 3 system and surface wave properties