Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 52, Issue 5, 2005, Pages 923-926

  Lin, Hui Feng ^a   Wu, Chun Te ^a   Chien, Wei Cheng ^a   Chen, Sheng Wen ^a   Kao, Hui Ling ^a   Chyi, Jen Inn ^b   Chen, Jyh Shin ^c  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c National Science Council   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FABRICATION; GALLIUM NITRIDE; LOW TEMPERATURE EFFECTS; SAPPHIRE; SPUTTERING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

COUPLING COEFFICIENTS; HELICON SPUTTERING; LAYERED STRUCTURES; PIEZOELECTRIC PROPERTIES;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 23844486282     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2005.1503979     Document Type: Article

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