Surface acoustic wave velocity and electromechanical coupling coefficient of GaN grown on (0001) sapphire by metal-organic vapour phase epitaxy

Chinese Physics Letters

Volumn 18, Issue 10, 2001, Pages 1418-1419

  Chen, Zhen ^a   Lu, Da Cheng ^a   Wang, Xiao Hui ^a   Liu, Xiang Lin ^a   Han, Pei De ^a   Yuan, Hai Rong ^a   Wang, Du ^a   Wang, Zhan Guo ^a   He, Shi Tang ^b   Li, Hong Lang ^b   Yan, Li ^c   Chen, Xiao Yang ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF ACOUSTICS   (China)

^c CHINA AEROSPACE SCIENCE AND INDUSTRY CORPORATION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE VELOCITY; ACOUSTIC WAVES; ELECTROMECHANICAL COUPLING; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SAPPHIRE; ULTRASONIC TRANSDUCERS; WAVE PROPAGATION;

ACOUSTIC SURFACE WAVES; ELECTROMECHANICAL COUPLING COEFFICIENTS; GAN FILM; HIGH QUALITY; HIGH RESISTIVITY; METAL-ORGANIC VAPOUR PHASE EPITAXY; SURFACE ACOUSTIC WAVE VELOCITIES; SURFACE ACOUSTIC WAVES; SURFACE WAVE VELOCITY; WAVE PROPERTIES;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 0035637032     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/10/338     Document Type: Article

References (16)

1. Nakamura S and Senoh M 1995 Japan. J. Appl. Phys. 34 L1332
2. Nakamura S and Senoh M 1996 J. Appl. Phys. 35 L217
3. Khan M A, Chen Q, Sun C J, Yang J W, Blasingame M, Shur M S and Park H 1996 Appl. Phys. Lett. 68 514
4. Strite S and Morkoc 1992 J. Vac. Sci. Technol. B 10 1237
5. Bernardini F and Fiorentini V 1997 Phys. Rev. B 56 R10 024
6. Sykhvski A and Kaminski V V 1996 Appl. Phys. Lett. 68 818
7. O'Clock G D Jr and Duffy M T 1973 Appl. Phys. Lett. 23 55
8. Kaya K, Kanno Y, Takahashi H, Shibata Y and Hirai T 1996 Japan. J. Appl. Phys. 35 2782
9. Deger C and Born E 1998 Appl. Phys. Lett. 72 2400
10. Lee S H and Jeong H H 2000 Int. Workshop on Nitride Semiconductors (Japan: Nagoya) pp 985-8
11. Chen P et al 2000 Chin. Phys. Lett. 17 224
12. Lean EGH 1970 Proc. IEEE 58 1939
13. Mcskimin H J 1961 J. Acoust. Soc. Am. 33 12
14. Papadakis E P 1967 J. Acoust. Soc. Am. 42 1045
15. Wang C H et al 1999 Chin. Phys. Lett. 16 740
16. Madar R and Michel D 1977 J. Cryst. Growth 40 239