Electrical characterization and cathodoluminescence microanalysis of AlN/GaN heterostructures

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 336-340

  Hubbard, S M ^a   Pavlidis, D ^a   Valiaev, V ^a   Stevens Kalceff, M A ^b   Tiginyanu, I M ^c  

^a University of Michigan   (United States)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

Author keywords

Aluminum nitride; Atomic force microscopy; Cathodoluminescence; Gallium nitride; Metal insulator semiconductor structures

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; ELECTRON GAS; ELECTRON MOBILITY; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROANALYSIS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

HALL MOBILITY;

HETEROJUNCTIONS;

EID: 17644442692     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)01045-5     Document Type: Conference Paper

References (13)