Impact of plasma induced damage on pMOSFETs with TIN/HF-silicate stack

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 398-402

  Song, S C ^a   Bae, S H ^a   Zhang, Z ^b   Sim, J H ^a   Sassman, B ^a   Bersuker, G ^a   Zeitzoff, P ^a   Lee, B H ^c  

^a SEMATECH   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNA STRUCTURES; ELECTRICAL STRESS; GATE STACK; PLASMA INDUCED DAMAGE;

ANTENNAS; DIELECTRIC DEVICES; ETCHING; PLASMAS; SILICATES; STRESS ANALYSIS;

MOSFET DEVICES;

EID: 28744436288     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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2. Song, S.-C, et al. "Avoiding plasma induced damage to gate oxide with conductive top film (CTF) on PECVD contact etch stop layer", Symp. VLSI Technology, 2002. p.72-73
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6. Sim, J.H., et al., "Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode". Sold State Device Meeting, 2004, p.214-215.
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10. Song S.C., et.al., "Effects of Boron Diffusion in PMOSFETs with TiN/HfSiO Gate Stack" IEEE Electron Device Letter, in press
11. Kim S. U., "High susceptibility of p+ gate oxides to plasma damage in advanced CMOS technology," International Symposium on Plasma Process Induced Damage, 1997,p. 189-192
12. Liu I. M., et.al., "Plasma-induced charging damage in p+-polysilicon PMOSFETs," The International Society for Optical Engineering Microelectronic Device Technology, vol. 3212. SPIE-Int. Soc. Opt. Eng, 1997, pp. 275-282.