Comparison of plasma-induced damage in SIQ2/TIN and HFQ 2/TIN gate stacks

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 67-70

  Young, C D ^a   Berauker, G ^a   Zhu, F ^c   Matthews, K ^b   Choi, R ^a   Song, S C ^a   Park, H K ^d   Lee, J C ^c   Lee, B H ^a  

^a SEMATECH   (United States)

^b ATDF   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; ELECTRIC CHARGE; ELECTRODES; HIGH TEMPERATURE EFFECTS; STACKING FAULTS; THIN FILMS; TITANIUM NITRIDE;

AMPHOTERIC INTERFACE STATES; COMB ANTENNA STRUCTURES; PLASMA-INDUCED DAMAGE;

GATE DIELECTRICS;

EID: 34548753996     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369870     Document Type: Conference Paper

References (6)

1. S.-C. Song, S. Filipiak. A. Perora, M. Turner, F. Huang, S. G. II. Anderson, K. Laegu, M. Byoung, D. Menke, S. Tukunang, and S. Venkatesan, "Avoiding plasma induced damage to gate oxide with conductive top film (CTF) on PECVD contact etch stop layer," presented at VLSI Symposium Technical Digest pp. 72-73, 2002.
2. K. P. Cheung, Plasma Charging Damage: Springer, 2001.
3. J. S. Suehle, E. M. Vogel. M. D. Edelstein, C. A. Richter, N. V. Nguyen, I. Levin, D. L. Kaiser, II. Wu, and J. B. Bernstein, "Challenges of high-k gate dielectrics for future MOS devices," presented at International Symposium on P2ID, pp. 90-93, 2001.
4. P. J. Tzeng, Y. Y. Chang, and K, S. Chang-Liao, "Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material," IEEE Electron Device Letters, vol. 22, pp. 527-529, 2001.
5. S. C. Song, S. H. Bae, Z. Zhang, J. H. Sim, B. Sassman, G. Bersuker, P. Zeitzoff, and B. H. Lee, "Impact of Plasma Induced Damage on PMOSFETs with TiN/Hf-Silicate Stack," presented at International Reliability Physics Symposium, pp. 398-402, 2005.
6. G. Bersuker. B. H. Lee, and II. R. Huff, "Novel Dielectric Materials for Future Transistor Generations," International Journal of High Speed Electronics and Systems, vol. 16, pp. 221-239, 2006.