-
2
-
-
0030704012
-
Reduction of residual charge in surface-neutralization-based neutral beams
-
Goeckner M J, Bennett T K, Park J Y, Wang Z and Cohen S A 1997 Reduction of residual charge in surface-neutralization-based neutral beams Int. Symp. on Plasma Process-Induced Damage (AVS, Monterey, CA)
-
(1997)
Int. Symp. on Plasma Process-Induced Damage
-
-
Goeckner, M.J.1
Bennett, T.K.2
Park, J.Y.3
Wang, Z.4
Cohen, S.A.5
-
3
-
-
0001241346
-
Digital etching study and Fabrication of fine Si lines and dots
-
Yamamoto J, Kawasaki T, Sakaue H, Shingubara S and Horiike Y 1993 Digital etching study and Fabrication of fine Si lines and dots Thin Solid Films 225 124-9
-
(1993)
Thin Solid Films
, vol.225
, Issue.1-2
, pp. 124-129
-
-
Yamamoto, J.1
Kawasaki, T.2
Sakaue, H.3
Shingubara, S.4
Horiike, Y.5
-
5
-
-
0029288870
-
Kinetic-energy-enhanced neutral etching
-
Leone S R 1995 Kinetic-energy-enhanced neutral etching J. Appl. Phys. 34 2073-82
-
(1995)
J. Appl. Phys.
, vol.34
, Issue.PART 1
, pp. 2073-2082
-
-
Leone, S.R.1
-
6
-
-
21344479925
-
Etching of Si surfaces with hot chlorine beams: Translational and vibrational excitation of the incident chlorine particles
-
Szabo A and Engel T 1994 Etching of Si surfaces with hot chlorine beams: translational and vibrational excitation of the incident chlorine particles J. Vac. Sci. Technol. A 12 648-57
-
(1994)
J. Vac. Sci. Technol.
, vol.12
, Issue.3
, pp. 648-657
-
-
Szabo, A.1
Engel, T.2
-
7
-
-
0036508378
-
Process requirements for continued scaling of CMOS-the need and prospects for atomic-level maniqulation
-
Agnello P D 2002 Process requirements for continued scaling of CMOS-the need and prospects for atomic-level maniqulation IBM J. Res. Dev. 46 317-38
-
(2002)
IBM J. Res. Dev.
, vol.46
, Issue.2-3
, pp. 317-338
-
-
Agnello, P.D.1
-
9
-
-
0001241346
-
-
yamamoto J, Kawasaki T, Sakaue H, Shingubara S and Horiike Y 1993 Thin Solid Films 225 124
-
(1993)
Thin Solid Films
, vol.225
, Issue.1-2
, pp. 124
-
-
Yamamoto, J.1
Kawasaki, T.2
Sakaue, H.3
Shingubara, S.4
Horiike, Y.5
-
12
-
-
0009632952
-
Hot jet etching of Pb, GaAs, and Si
-
Geis M W, Efremow N N, Pang S W and Anderson A C 1987 Hot jet etching of Pb, GaAs, and Si J. Vac. Sci. Technol. B 5 363-5
-
(1987)
J. Vac. Sci. Technol.
, vol.5
, Issue.1
, pp. 363-365
-
-
Geis, M.W.1
Efremow, N.N.2
Pang, S.W.3
Anderson, A.C.4
-
14
-
-
0000191899
-
Gas-surface dynamics and profile evolution during etching of silicon
-
Hwang G S, Anderson C M, Gordon M J, Moore T A, Minton T A and Giapis K P 1996 Gas-surface dynamics and profile evolution during etching of silicon Phys. Rev. Lett. 77 3049-52
-
(1996)
Phys. Rev. Lett.
, vol.77
, Issue.14
, pp. 3049-3052
-
-
Hwang, G.S.1
Anderson, C.M.2
Gordon, M.J.3
Moore, T.A.4
Minton, T.A.5
Giapis, K.P.6
-
17
-
-
0026256249
-
-
Yokogawa K, Yajima Y, Misutani T, Nishimatsu S and Ninomiya K 1991 Japan. J. Appl. Phys. 30 3199
-
(1991)
Japan. J. Appl. Phys.
, vol.30
, Issue.PART 1
, pp. 3199
-
-
Yokogawa, K.1
Yajima, Y.2
Misutani, T.3
Nishimatsu, S.4
Ninomiya, K.5
-
19
-
-
0001004142
-
Sputtering yield and radiation damage by neutral beam bombardment
-
Mizutani T and Nishimatsu S 1988 Sputtering yield and radiation damage by neutral beam bombardment J. Vac. Sci. Technol. A 6 1417-20
-
(1988)
J. Vac. Sci. Technol.
, vol.6
, Issue.3
, pp. 1417-1420
-
-
Mizutani, T.1
Nishimatsu, S.2
-
20
-
-
0028405335
-
Generation of electron cyclotron resonance neutral stream and its application to Si etching
-
Tsuchizawa T, Jin Y and Matsuo S 1994 Generation of electron cyclotron resonance neutral stream and its application to Si etching Japan. J. Appl. Phys. (Part 1) 33 2200-6
-
(1994)
Japan. J. Appl. Phys. (Part 1)
, vol.33
, Issue.PART 1
, pp. 2200-2206
-
-
Tsuchizawa, T.1
Jin, Y.2
Matsuo, S.3
-
21
-
-
0001443883
-
A Source of hyperthermal neutrals for materials processing
-
Groeckner M J, Bennett T K and Cohen S A 1997 A Source of hyperthermal neutrals for materials processing Appl. Phys. Lett. 71 980-2
-
(1997)
Appl. Phys. Lett.
, vol.71
, Issue.7
, pp. 980-982
-
-
Groeckner, M.J.1
Bennett, T.K.2
Cohen, S.A.3
-
22
-
-
0035271893
-
Anisotropic etching of polymer films by high energy (∼100 s of eV) oxygen atom neutral beams
-
Panda S and Economou D J 2001 Anisotropic etching of polymer films by high energy (∼100 s of eV) oxygen atom neutral beams J. Vac. Sci. Technol. A 19 398-404
-
(2001)
J. Vac. Sci. Technol.
, vol.19
, Issue.2
, pp. 398-404
-
-
Panda, S.1
Economou, D.J.2
-
23
-
-
0036748644
-
Generating high-efficiency neutral beams by using negative ions in an inductively coupled plasma source
-
Samukawa S, Sakamoto K and Ichiki K 2002 Generating high-efficiency neutral beams by using negative ions in an inductively coupled plasma source J. Vac. Sci. Technol. 20 1566
-
(2002)
J. Vac. Sci. Technol.
, vol.20
, Issue.5
, pp. 1566
-
-
Samukawa, S.1
Sakamoto, K.2
Ichiki, K.3
-
24
-
-
33748557528
-
Energy distribution and flux of fast neutrals and residual ions extracted from a neutral beam source
-
Ranjan A, Donnelly V M and Economou D J 2006 Energy distribution and flux of fast neutrals and residual ions extracted from a neutral beam source J. Vac. Sci. Technol. A 20 1839-46
-
(2006)
J. Vac. Sci. Technol.
, vol.20
, pp. 1839-1846
-
-
Ranjan, A.1
Donnelly, V.M.2
Economou, D.J.3
-
25
-
-
0035507130
-
Development of a low angle forward reflected neutral oxygen beam for materials processing
-
Lee D H, Bae J W, Park S D and Yeom G Y 2001 Development of a low angle forward reflected neutral oxygen beam for materials processing Thin Solid Films 398-399 647-51
-
(2001)
Thin Solid Films
, vol.398-399
, pp. 647-651
-
-
Lee, D.H.1
Bae, J.W.2
Park, S.D.3
Yeom, G.Y.4
-
27
-
-
38049039791
-
Formation of high flux parallel neutral beam using a three grid system of ion beam during low angle forward reflection of ions
-
Park B J, Min K S, Park S D, Bae J W, Vozniy O and Yeom G Y 2007 Formation of high flux parallel neutral beam using a three grid system of ion beam during low angle forward reflection of ions Solid State Phenomena 124-126 275-8
-
(2007)
Solid State Phenomena
, vol.124-126
, pp. 275-278
-
-
Park, B.J.1
Min, K.S.2
Park, S.D.3
Bae, J.W.4
Vozniy, O.5
Yeom, G.Y.6
-
28
-
-
0037011086
-
Study on the low-angle forward-reflected neutral beam etching system for SiO2 etching
-
Chung M J, Lee D H and Yeom G Y 2002 Study on the low-angle forward-reflected neutral beam etching system for SiO2 etching Thin Solid Films 420-421 579-83
-
(2002)
Thin Solid Films
, vol.420-421
, pp. 579-583
-
-
Chung, M.J.1
Lee, D.H.2
Yeom, G.Y.3
-
30
-
-
0346984355
-
MOS gate insulator breakdown caused by exposure to plasma
-
Kawamoto Y 1985 MOS gate insulator breakdown caused by exposure to plasma Proc. 7th Dry Process Symp. (Tokyo) IEE pp 132-7
-
(1985)
IEE
, pp. 132-137
-
-
Kawamoto, Y.1
-
35
-
-
0342682208
-
Charging damage during residual metal overetching
-
Hwang G S and Giapis K P 1999 Charging damage during residual metal overetching Appl. Phys. Lett. 74 932-4
-
(1999)
Appl. Phys. Lett.
, vol.74
, Issue.7
, pp. 932-934
-
-
Hwang, G.S.1
Giapis, K.P.2
-
36
-
-
17744383019
-
Removal of aspect-ratio-dependent etching by low-angle forward reflected neutral-beam etching
-
Lee D H, Park B J and Yeom G Y 2005 Removal of aspect-ratio-dependent etching by low-angle forward reflected neutral-beam etching J. Korean Phys. Soc. 46 867-71
-
(2005)
J. Korean Phys. Soc.
, vol.46
, pp. 867-871
-
-
Lee, D.H.1
Park, B.J.2
Yeom, G.Y.3
-
37
-
-
34047128710
-
Effect of neutral beam etching of p-GaN on the GaN device characteristics
-
Park B J, Min K S, Lee H C, Bae J W, Kim D W and Yeom G Y 2007 Effect of neutral beam etching of p-GaN on the GaN device characteristics J. Vac. Sci. Technol. B 25 295-8
-
(2007)
J. Vac. Sci. Technol.
, vol.25
, Issue.2
, pp. 295-298
-
-
Park, B.J.1
Min, K.S.2
Lee, H.C.3
Bae, J.W.4
Kim, D.W.5
Yeom, G.Y.6
-
38
-
-
34247612520
-
The effect of Ar neutral beam treatment of screen-printed carbon nanotubes for enhanced field emission
-
Kyung S J, Park J B, Park B J, Min K S, Lee J H and Yeom G Y 2007 The effect of Ar neutral beam treatment of screen-printed carbon nanotubes for enhanced field emission J. Appl. Phys. 101 083305-1-5
-
(2007)
J. Appl. Phys.
, vol.101
, Issue.8
, pp. 083305
-
-
Kyung, S.J.1
Park, J.B.2
Park, B.J.3
Min, K.S.4
Lee, J.H.5
Yeom, G.Y.6
-
39
-
-
34047258308
-
Effect of fluorine ion/neutral-beam irradiation on ohmic contact formation to n-type GaN
-
Lee H C, Bae J W, Park B J, Jang J H and Yeom G Y 2007 Effect of fluorine ion/neutral-beam irradiation on ohmic contact formation to n-type GaN Electrochem. Solid-State Lett. 10 H161-4
-
(2007)
Electrochem. Solid-State Lett.
, vol.10
, Issue.6
-
-
Lee, H.C.1
Bae, J.W.2
Park, B.J.3
Jang, J.H.4
Yeom, G.Y.5
-
40
-
-
33846468808
-
CF4-based neutral-beam etch characteristics of Si and SiO2 using a low angle forward reflected neutral-beam etching system
-
Lee D H, Park B J, Min K S and Yeom G Y 2006 CF4-based neutral-beam etch characteristics of Si and SiO2 using a low angle forward reflected neutral-beam etching system J. Korean Phys. Soc. 49 2307-10
-
(2006)
J. Korean Phys. Soc.
, vol.49
, Issue.6
, pp. 2307-2310
-
-
Lee, D.H.1
Park, B.J.2
Min, K.S.3
Yeom, G.Y.4
-
41
-
-
0001101997
-
Electrical effects of plasma damage in p-GaN
-
Cao X A, Pearton S J, Zhang A P, Dang G T, Ren F, Shul R J, Zhang L, Hickman R and Van Hove J M 1999 Electrical effects of plasma damage in p-GaN Appl. Phys. Lett. 75 2569-71
-
(1999)
Appl. Phys. Lett.
, vol.75
, Issue.17
, pp. 2569-2571
-
-
Cao, X.A.1
Pearton, S.J.2
Zhang, A.P.3
Dang, G.T.4
Ren, F.5
Shul, R.J.6
Zhang, L.7
Hickman, R.8
Van Hove, J.M.9
-
42
-
-
2342537112
-
Removal of dry etch damage in p-type GaN by wet etching of sacrificial oxide layer
-
Lee J M, Lee K S and Park S J 2004 Removal of dry etch damage in p-type GaN by wet etching of sacrificial oxide layer J. Vac. Sci. Technol. B 22 479-82
-
(2004)
J. Vac. Sci. Technol.
, vol.22
, Issue.2
, pp. 479-482
-
-
Lee, J.M.1
Lee, K.S.2
Park, S.J.3
-
43
-
-
4944229040
-
A study of transparent indium tin oxide (ITO) contact to p-GaN
-
Kim D W, Sung Y J, Park J W and Yeom G Y 2001 A study of transparent indium tin oxide (ITO) contact to p-GaN Thin Solid Films 398-9 87-92
-
(2001)
Thin Solid Films
, vol.398-399
, pp. 87-92
-
-
Kim, D.W.1
Sung, Y.J.2
Park, J.W.3
Yeom, G.Y.4
-
44
-
-
0038311836
-
Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
-
Huh C, Lee K S, Kang E J and Park S J 2003 Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface J. Appl. Phys. 93 9383-5
-
(2003)
J. Appl. Phys.
, vol.93
, Issue.11
, pp. 9383-9385
-
-
Huh, C.1
Lee, K.S.2
Kang, E.J.3
Park, S.J.4
-
45
-
-
0028485081
-
Aligned carbon nanotube arrays formed by cutting a polymer resin-Nanotube Composite
-
Ajayan P M, Stephan P, Coliex C and Trauth D 1994 Aligned carbon nanotube arrays formed by cutting a polymer resin-Nanotube Composite Science 265 1212-4
-
(1994)
Science
, vol.265
, Issue.5176
, pp. 1212-1214
-
-
Ajayan, P.M.1
Stephan, P.2
Coliex, C.3
Trauth, D.4
-
46
-
-
0033527691
-
Hydrogen storage in single-walled carbon nanotubes at room temperature
-
Liu C, Fan Y Y, Liu M, Cong H T, Cheng H M and Dressel M S 1999 Hydrogen storage in single-walled carbon nanotubes at room temperature Science 286 1127-9
-
(1999)
Science
, vol.286
, Issue.5442
, pp. 1127-1129
-
-
Liu, C.1
Fan, Y.Y.2
Liu, M.3
Cong, H.T.4
Cheng, H.M.5
Dressel, M.S.6
-
47
-
-
9744279393
-
A carbon nanotube field-emission electron source
-
De Heer W A, Chatelain A and Ugarte D A 1995 A carbon nanotube field-emission electron source Science 270 1179-80
-
(1995)
Science
, vol.270
, Issue.5239
, pp. 1179-1180
-
-
De Heer, W.A.1
Chatelain, A.2
Ugarte, D.A.3
-
48
-
-
0035804682
-
Realization of gated field emitters for electrophotonic applications using carbon nanotube line emitters directly grown into submicrometer holes
-
Lee Y H, Jang Y T, Kim D H, Ahn J H and Ju B 2001 Realization of gated field emitters for electrophotonic applications using carbon nanotube line emitters directly grown into submicrometer holes Adv. Mater. (Weinheim, Germany) 13 479-82
-
(2001)
Adv. Mater. (Weinheim, Germany)
, vol.13
, Issue.7
, pp. 479-482
-
-
Lee, Y.H.1
Jang, Y.T.2
Kim, D.H.3
Ahn, J.H.4
Ju, B.5
-
50
-
-
31144473091
-
Low temperature burnable carbon nanotube paste component for carbon nanotube field emitter backlight unit
-
Lee S R, Im W B, Kang J H and Jeom D Y 2005 Low temperature burnable carbon nanotube paste component for carbon nanotube field emitter backlight unit J. Vac. Sci. Technol. B 23 745-8
-
(2005)
J. Vac. Sci. Technol.
, vol.23
, Issue.2
, pp. 745-748
-
-
Lee, S.R.1
Im, W.B.2
Kang, J.H.3
Jeom, D.Y.4
-
51
-
-
0036841587
-
Field emission display with carbon nanotubes cathode: Prepared by a screen-printing process
-
Yukui L, Changchun Z and Xinghui L 2002 Field emission display with carbon nanotubes cathode: prepared by a screen-printing process Diamond Relat. Mater. 11 1845-7
-
(2002)
Diamond Relat. Mater.
, vol.11
, Issue.11
, pp. 1845-1847
-
-
Yukui, L.1
Changchun, Z.2
Xinghui, L.3
-
52
-
-
0242666826
-
Enhanced field emission from printed carbon nanotubes by mechanical surface modification
-
Vink T J, Gillies M, Kriege J C and Van de larr H W J J 2003 Enhanced field emission from printed carbon nanotubes by mechanical surface modification Appl. Phys. Lett. 83 3552-4
-
(2003)
Appl. Phys. Lett.
, vol.83
, Issue.17
, pp. 3552-3554
-
-
Vink, T.J.1
Gillies, M.2
Kriege, J.C.3
Van De Larr, H.W.J.J.4
-
53
-
-
3042568879
-
Plasma etching carbon nanotube arrays and the field emission properties
-
Liu Y, Liu L, Liu P, Sheng L and Fan S 2004 Plasma etching carbon nanotube arrays and the field emission properties Diamond Relat. Mater. 13 1609-13
-
(2004)
Diamond Relat. Mater.
, vol.13
, Issue.9
, pp. 1609-1613
-
-
Liu, Y.1
Liu, L.2
Liu, P.3
Sheng, L.4
Fan, S.5
-
54
-
-
0037429828
-
Ultraviolet laser treatment of multiwall carbon nanotubes grown at low temperature
-
Kim J S, Ahn K S, Kim C O and Hong J P 2003 Ultraviolet laser treatment of multiwall carbon nanotubes grown at low temperature Appl. Phys. Lett. 82 1607-9
-
(2003)
Appl. Phys. Lett.
, vol.82
, Issue.10
, pp. 1607-1609
-
-
Kim, J.S.1
Ahn, K.S.2
Kim, C.O.3
Hong, J.P.4
-
55
-
-
3242679027
-
Vertical alignment of printed carbon nanotubes by multiple field emission cycles
-
Kim Y C, Sohn K H, Cho Y M and Yoo E H 2004 Vertical alignment of printed carbon nanotubes by multiple field emission cycles Appl. Phys. Lett. 84 5350-2
-
(2004)
Appl. Phys. Lett.
, vol.84
, Issue.26
, pp. 5350-5352
-
-
Kim, Y.C.1
Sohn, K.H.2
Cho, Y.M.3
Yoo, E.H.4
-
56
-
-
2542481039
-
Effects of the ion irradiation of screen-printed carbon nanotubes for use in field emission display applications
-
Kim D H, Kim C D and Lee H R 2004 Effects of the ion irradiation of screen-printed carbon nanotubes for use in field emission display applications Carbon 42 1807-12
-
(2004)
Carbon
, vol.42
, Issue.8-9
, pp. 1807-1812
-
-
Kim, D.H.1
Kim, C.D.2
Lee, H.R.3
-
57
-
-
9644262640
-
Effects of CF plasma on the field emission properties of aligned multi-wall carbon nanotube films
-
Zhu Y W, Cheong F C, Yu T, Xu X J, Lin C T and Thong J T L 2005 Effects of CF plasma on the field emission properties of aligned multi-wall carbon nanotube films Carbon 43 395-400
-
(2005)
Carbon
, vol.43
, Issue.2
, pp. 395-400
-
-
Zhu, Y.W.1
Cheong, F.C.2
Yu, T.3
Xu, X.J.4
Lin, C.T.5
Thong, J.T.L.6
-
58
-
-
0141637222
-
Non-reactive rf treatment of multiwall carbon nanotube with inert argon plasma for enhanced field emission
-
Ahn K S, Kim J S, Kim C O and Hong J P 2003 Non-reactive rf treatment of multiwall carbon nanotube with inert argon plasma for enhanced field emission Carbon 41 2481-5
-
(2003)
Carbon
, vol.41
, Issue.13
, pp. 2481-2485
-
-
Ahn, K.S.1
Kim, J.S.2
Kim, C.O.3
Hong, J.P.4
-
59
-
-
79956016103
-
Oxygen and ozone oxidation-enhanced field emission of carbon nanotubes
-
Kung S C and Hwang K C 2002 Oxygen and ozone oxidation-enhanced field emission of carbon nanotubes Appl. Phys. Lett. 80 4819-21
-
(2002)
Appl. Phys. Lett.
, vol.80
, Issue.25
, pp. 4819-4821
-
-
Kung, S.C.1
Hwang, K.C.2
-
60
-
-
79956017775
-
Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures
-
Qiao D, Yu L S, Jia L, Asbeck P M, Lau S S and Haynes T E 2002 Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures Appl. Phys. Lett. 80 992-4
-
(2002)
Appl. Phys. Lett.
, vol.80
, Issue.6
, pp. 992-994
-
-
Qiao, D.1
Yu, L.S.2
Jia, L.3
Asbeck, P.M.4
Lau, S.S.5
Haynes, T.E.6
-
61
-
-
0036568213
-
Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact
-
Jeon C M, Jang H W, Choi K J, Bae S B, Lee J H and Lee J L 2002 Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact Solid-State Electron. 46 695-8
-
(2002)
Solid-State Electron.
, vol.46
, Issue.5
, pp. 695-698
-
-
Jeon, C.M.1
Jang, H.W.2
Choi, K.J.3
Bae, S.B.4
Lee, J.H.5
Lee, J.L.6
-
62
-
-
0033221724
-
AlGaN/GaN HFETs with new ohmic and Schottky contacts for thermal stability up to 400 °c
-
Hilsenbeck J, Rjeger W, Nebauer E, John W, Trankle G, Wiirfl J, Ramakrishnan A and Obloh H 1999 AlGaN/GaN HFETs with new ohmic and Schottky contacts for thermal stability up to 400 °C Phys. Status Solidi a 176 183-7
-
(1999)
Phys. Status Solidi
, vol.176
, Issue.1
, pp. 183-187
-
-
Hilsenbeck, J.1
Rjeger, W.2
Nebauer, E.3
John, W.4
Trankle, G.5
Wiirfl, J.6
Ramakrishnan, A.7
Obloh, H.8
-
63
-
-
0000067957
-
Microstructure of Ti/Al ohmic contacts for n-AlGaN
-
Ruvimov S, Liliental-Weber Z, Washburn J, Qiao D, Lau S S and Chu P K 1998 Microstructure of Ti/Al ohmic contacts for n-AlGaN Appl. Phys. Lett. 73 2582-4
-
(1998)
Appl. Phys. Lett.
, vol.73
, Issue.18
, pp. 2582-2584
-
-
Ruvimov, S.1
Liliental-Weber, Z.2
Washburn, J.3
Qiao, D.4
Lau, S.S.5
Chu, P.K.6
-
66
-
-
3843058900
-
The effect of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN
-
Ping A T, Chen Q, Yang J W, Khan M A and Adesida I 1998 The effect of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN J. Electron. Mater. 27 261-5
-
(1998)
J. Electron. Mater.
, vol.27
, Issue.4
, pp. 261-265
-
-
Ping, A.T.1
Chen, Q.2
Yang, J.W.3
Khan, M.A.4
Adesida, I.5
-
67
-
-
3943098679
-
Characterization of reactive ion etched-induced damage to n-GaN surfaces using Schottky diodes
-
Ping A T, Schmitz A C, Chen Q, Yang J W, Khan M A and Adesida I 1997 Characterization of reactive ion etched-induced damage to n-GaN surfaces using Schottky diodes J. Electron. Mater. 26 266-72
-
(1997)
J. Electron. Mater.
, vol.26
, Issue.3
, pp. 266-272
-
-
Ping, A.T.1
Schmitz, A.C.2
Chen, Q.3
Yang, J.W.4
Khan, M.A.5
Adesida, I.6
|