A study of transparent indium tin oxide (ITO) contact to p-GaN

Thin Solid Films

Volumn 398-399, Issue , 2001, Pages 87-92

  Kim, D W ^a   Sung, Y J ^a   Park, J W ^b   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Indium tin oxide; P GaN; Rapid thermal annealing (RTA) system; Transparent oxide contact

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SAPPHIRE; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS;

TRANSPARENT OXIDE CONTACTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 4944229040     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01368-2     Document Type: Article

References (13)