Effect of fluorine ion/neutral-beam irradiation on ohmic contact formation to n-type GaN

Electrochemical and Solid-State Letters

Volumn 10, Issue 6, 2007, Pages 161-164

  Lee, H C ^a   Bae, J W ^a   Park, B J ^a   Jang, J H ^b   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; FLUORINE; IMPURITIES; MULTILAYERS;

FLUORINE IONS; ION-BEAM TREATMENT; NEUTRAL BEAM IRRADIATION;

ION BEAMS;

EID: 34047258308     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2716258     Document Type: Article

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