Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact

Solid-State Electronics

Volumn 46, Issue 5, 2002, Pages 695-698

  Jeon, Chang Min ^a   Jang, Ho Won ^a   Choi, Kyoung Jin ^a   Bae, Sung Bum ^b   Lee, Jung Hee ^b   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CURRENT DENSITY; GALLIUM NITRIDE; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; OHMIC CONTACTS; TRANSCONDUCTANCE;

DRAIN CURRENT DENSITY;

FIELD EFFECT TRANSISTORS;

EID: 0036568213     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00325-2     Document Type: Article

References (10)