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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 3, 1996, Pages 1901-1905

Neutral-beam-assisted etching system for low-damage SiO2 etching of 8-inch wafers

(3) Yokogawa, Ken'etsu a Yunogami, Takasi a Mizutani, Tatsumi a

a HITACHI LTD (Japan)

Author keywords

Assisted etching; Large diameter; Low damage; Neutral beam; Neutral radical; Plasma; SiO2

Indexed keywords

ANISOTROPY; ARGON; ELECTRODES; ETCHING; FREE RADICALS; HALOGEN COMPOUNDS; ION BEAMS; ION BOMBARDMENT; PLASMA SOURCES; SILICA;

ENERGETIC NEUTRAL BEAMS; HALIDE MOLECULES; MAGNETO MICROWAVE PLASMA SOURCE; NEUTRAL BEAM ASSISTED ETCHING SYSTEM; NEUTRAL BEAM BOMBARDMENT; NEUTRAL RADICALS; SILICA ETCHING;

CHEMICAL EQUIPMENT;

EID: 0030103242 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1901 Document Type: Article

Times cited : (21)

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