Compact DC model for submicron GaAs MESFETs including gate-source modulation effects

Microelectronics Journal

Volumn 32, Issue 3, 2001, Pages 249-251

  McNally, P J ^a   Daniels, B ^a  

^a DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

GASE-SOURCE MODULATION;

MESFET DEVICES;

EID: 0035280477     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(00)00103-8     Document Type: Article

References (13)

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