DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE

Solid-State Electronics

Volumn 46, Issue 5, 2002, Pages 743-746

  Lee, C ^a   Lu, W ^a   Piner, E ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b Epitronics/ATMI   (United States)

Author keywords

GaN; Gate recess; Inductively coupled plasma reactive ion etching; MESFET

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; GATES (TRANSISTOR); INDUCTIVELY COUPLED PLASMA; NATURAL FREQUENCIES; OSCILLATIONS; REACTIVE ION ETCHING; SAPPHIRE; SUBSTRATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CUTOFF FREQUENCY; PEAK EXTRINSIC TRANSCONDUCTANCE;

MESFET DEVICES;

EID: 0036568265     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00292-1     Document Type: Article

References (12)

1. Full band Monte Carlo simulation of zincblende GaN MESFET's including realistic impact ionization rates
2. GaN MESFETs for high-power and high-temperature microwave applications
3. High-power GaN MESET on sapphire substrate
4. Characteristics of a GaN metal semiconductor field-effect transistor grown on a sapphire substrate by metalorganic chemical vapor deposition
5. GaN FETs for microwave and high-temperature applications
6. High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor
7. Gate recessing of GaN MESFETs using photoelectrochemical wet etching
8. High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process
9. Recessed gate GaN field effect transistor
10. GaN: Processing, defects, and devices
11. Characterization of reactive ion etching-induced damage to n-GaN surface using Schottky diodes
12. Trap effects studies in GaN MESFETs by pulsed measurements