Recessed-gate GaN MESFET using ICP-RIE for high temperature microwave applications

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 41-42

  Lee, C ^a   Lu, W ^a   Piner, E ^a   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; OHMIC CONTACTS; PLASMA ETCHING; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; TRANSCONDUCTANCE;

GALLIUM NITRIDE MESFETS; HIGH TEMPERATURE MICROWAVE APPLICATIONS; INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING;

MESFET DEVICES;

EID: 0033645125     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)