A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications

Microelectronics Journal

Volumn 37, Issue 7, 2006, Pages 620-626

  Kabra, Sneha ^a   Kaur, Harsupreet ^a   Gupta, Ritesh ^a   Haldar, Subhasis ^b   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

GaN; MESFET; Velocity field relationship; Wide band gap semiconductor

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ENERGY GAP; MATHEMATICAL MODELS; MESFET DEVICES; MICROWAVES; MONTE CARLO METHODS; PARAMETER ESTIMATION; POWER ELECTRONICS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTOR DEVICES;

ELECTRON DRIFT VELOCITY MODELING; SUBMICRONS; VELOCITY FIELD RELATIONSHIP; WIDE BAND GAP SEMICONDUCTORS;

GALLIUM NITRIDE;

EID: 33646244486     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.09.018     Document Type: Article

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