Self-heating and trapping effects on the RF performance of GaN MESFETs

IEEE Transactions on Microwave Theory and Techniques

Volumn 52, Issue 4, 2004, Pages 1229-1236

  Islam, Syed S ^a   Anwar, A F M ^b  

^a Rochester Institute of Technology   (United States)

^b UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

Current collapse; Gain compression; GaN; Intermodulation; Large signal model; MESFETs; Self heating effects; Volterra series

Indexed keywords

COMPUTER SIMULATION; ELECTRON MOBILITY; GALLIUM NITRIDE; INTERMODULATION; LAPLACE TRANSFORMS; MATHEMATICAL MODELS; MONTE CARLO METHODS; POWER AMPLIFIERS; RADIO FREQUENCY AMPLIFIERS; RAMAN SPECTROSCOPY; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TRANSCONDUCTANCE;

CURRENT COLLAPSE; GAIN COMPRESSION; GAN; LARGE-SIGNAL MODEL; SELF-HEATING EFFECTS; VOLTERRA SERIES;

MESFET DEVICES;

EID: 2442558123     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.825662     Document Type: Article

References (27)

1. V. Kumar, W. Lu, F. A. Khan, R. Schwindt, A. Kuliev, J. Yang, and M. A. Khan, "High performance 0.15 μm recessed gate AlGaN/GaN HEMTs on sapphire," in Int. Electron Devices Meeting Tech. Dig., Dec. 2001, pp. 573-576.
2. T and low microwave noise," IEEE Trans. Electron Devices, vol. 48, pp. 581-585, Mar. 2001.
3. L. F. Eastman, "Experimental power-frequency limits of AlGaN/GaN HEMTs," in IEEE MTT-S Int. Microwave Symp. Dig., June 2002, pp. 2273-2275.
4. Y.-F. Wu, D. Kapolnek, J. Ibbetson, P. Parikh, B. Keller, and U. K. Mishra, "Very high power density AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 48, pp. 586-590, Mar. 2001.
5. T. Kikkawa, M. Nagahara, T. Kimura, S. Yokokawa, S. Kato, M. Yokoyama, Y Tateno, K. Horono, K. Domen, Y. Tamaguchi, N. Hara, and K. Joshin, "A 36 W CW AlGaN/GaN HEMT using surface-charge-controlled structure," in IEEE MTT-S Int. Microwave Symp. Dig., June 2002, pp. 1815-1818.
6. I. Daumiller, C. Kirchner, M. Kamp, K. Ebeling, L. Pond, C. E. Weitzel, and E. Kohn, "Evaluation of AlGaN/GaN HFETs up to 750° C," in Device Research Conf. Dig., 1998, pp. 114-115.
7. M. Kuball, J. M. Hayes, M. J. Uren, T. Martin, J. C. H. Birbeck, R. S. Balmer, and B. T. Hughes, "Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy," IEEE Electron Dev. Lett., vol. 23, pp. 7-9, Jan. 2002.
8. S. Nuttinck, E. Gebara, J. Laskar, B. Wagner, and M. Harris, "RF performance and thermal analysis of AlGaN/GaN power HEMTs in presence of self-heating effects," in IEEE MTT-S Int. Microwave Symp. Dig., June 2002, pp. 921-924.
9. S. Nuttinck, E. Gebara, J. Laskar, and M. Harris, "Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs," IEEE Trans. Microwave Theory Tech., vol. 49, pp. 2413-2420, Dec. 2001.
10. 1-xN semiconductors," IEEE Trans. Electron Devices, vol. 48, pp. 567-572, Mar. 2001.
11. _, "Temperature dependent transport parameters in short GaN structures," Phys. Stat. Sol., vol. (b)228, no. 2, pp. 575-578, 2001.
12. S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 48, pp. 465-477, Mar. 2001.
13. P. B. Klein, S. C. Binari, J. A. Freitas, Jr., and A. E. Wickenden, "Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors," J. Appl. Phys., vol. 88, no. 5, pp. 2843-2852, Sept. 2000.
14. S. C. Binari, W. Kruppa, H. B. Dietrich, G. Kelner, A. E. Wickenden, and J. A. Freitas, Jr., "Fabrication and characterization of GaN FETs," Solid State Electron., vol. 41, no. 10, pp. 1549-1554, Oct. 1997.
15. G. Verzellesi, R. Pierobon, F. Rampazzo, G. Meneghesso, A. Chini, U. K. Mishra, C. Canali, and E. Zanoni, "Experimental and numerical investigation of current collapse in AlGaN/GaN HEMTs," in Int. Electron Devices Meeting Tech. Dig., 2002, pp. 689-692.
16. S.S. Islam and A. F. M. Anwar, "A physics-based model of frequency-dependent electrical characteristics in GaN MESFET," presented at the Device Research Conf., June 2003.
17. S. S. Islam, "Large-signal modeling of GaN-based microwave power transistors," Ph.D. dissertation, Dept. Elect. Eng., Univ. Connecticut, Storrs, CT, 2002.
18. J. M. Golio, M. G. Miller, G. N. Maracas, and D. A. Johnson, "Frequency-dependent electrical characteristics of GaAs MESFETs," IEEE Trans. Electron Devices, vol. 37, no. 5, pp. 1217-1227, May 1990.
19. F. Ali and A. Gupta, Eds., HEMTs and HBTs: Devices, Fabrication and Circuits. Norwood, MA: Artech House, 1991.
20. C. Gaquiere, S. Trassaert, B. Boudart, and Y. Crosnier, "High power GaN MESFET on sapphire substrate," IEEE Microwave Guided Wave Lett., vol. 10, pp. 19-20, Jan. 2000.
21. E. Alekseev, D. Pavlidis, N. X. Nguyen, C. Nguyen, and D. E. Grider, "Power performance and scalability of AlGaN/GaN power MODFETs," IEEE Trans. Microwave Theory Tech., vol. 48, pp. 1694-1700, Oct. 2000.
22. S. S. Islam and A. F. M. Anwar, "Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects," IEEE Trans. Microwave Theory Tech., vol. 50, pp. 2474-2479, Nov. 2002.
23. _, "Large-signal modeling of GaN FET and nonlinearity analysis using Volterra series," in IEEE RFIC Symp. Tech. Dig., June 2002, pp. 351-354.
24. S. Trassaert, B. Boudart, C. Gaquiere, D. Theron, Y. Crosnier, F. Huet, and M. A. Poisson, "Trap effects in GaN MESFETs by pulsed measurements," Electron Lett., vol. 35, no. 16, pp. 1386-1388, Aug. 1999.
25. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, "The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 48, pp. 560-566, Mar. 2001.
26. S. S. Islam and A. F. M. Anwar, "Temperature dependent nonlinearities in GaN/AlGaN HEMTs," IEEE Trans. Electron Devices, vol. 49, pp. 710-717, May 2002.
27. _, "Analysis of RF performances of GaN MESFETs including self-heating and trapping effects," in IEEE MTT-S Int. Microwave Symp. Dig., June 2003, pp. 459-462.