Effects of temperature variation (300-600 K) in MOSFET modeling in 6H-silicon carbide

Solid-State Electronics

Volumn 48, Issue 1, 2004, Pages 125-132

  Hasanuzzaman, Md ^a   Islam, Syed K ^a,b   Tolbert, Leon M ^a,b  

^a University of Tennessee Knoxville   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

High temperature MOSFET; Silicon carbide; Temperature variation effect

Indexed keywords

CARRIER MOBILITY; LEAKAGE CURRENTS; SILICON CARBIDE; THERMAL EFFECTS; THRESHOLD VOLTAGE;

CONTACT REGION RESISTANCES;

MOSFET DEVICES;

EID: 0142185193     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00293-4     Document Type: Article

References (18)

1. Shoucair F.S., Early J.M. High temperature diffusion leakage current-dependent MOSFET small-signal conductance. IEEE Trans. Electron Devices. 31(12):1984;1866-1872.
2. Shoucair F.S. High temperature latchup characteristics in VLSI CMOS circuits. IEEE Trans. Electron Devices. 35(12):1988;2424-2426.
3. Shoucair F.S. Electrical characteristics of large-scale integration silicon MOSFET's at very high temperatures, Part III: modeling and circuit behavior. IEEE Trans. Compon., Hybrid Manufact. Technol., CHMT. 7(1):1984;146-153.
4. Shoucair F.S. Design considerations in high temperature analog CMOS integrated circuits. IEEE Trans. Compon., Hybrid Manufact. Technol., CHMT. 9(3):1986;242-251.
5. Shoucair F.S. CMOS logic cell switching speed thermal characterization. Electron Lett. 23:1987;458-460.
6. Bhatnagar M., Baliga B.J. Comparison of 6H-SiC, 3C-SiC, and Si for power devices. IEEE Trans. Electron Devices. 40(3):1993;645-655.
7. Shenai K., Scott R.S., Baliga B.J. Optimum semiconductors for high power electronics. IEEE Trans. Electron Devices. 36(9):1989;1811-1823.
8. Morkoc H., Strite S., Gao G.B., Lin M.E., Sverdlov B., Burns M. Large-band-gap SiC, III-V nitride, and II-V ZnSe-based semiconductor device technologies. J. Appl. Phys. 76(3):1994;1363-1397.
9. Weitzel C., Palmour J., Carter C., Moore K., Nordquist K., Allen S.et al. Silicon carbide high-power devices. IEEE Trans. Electron Devices. 43(10):1996;1732-1741.
10. Hasanuzzaman M., Islam S.K., Tolbert L., Ozpineci B. Model simulation and verification of a vertical double implanted (DIMOS) transistor in 4H-SiC. Proceedings of the 7th IASTED International Multi-Conference. 2003;313-316 Palm Spring.
11. Ozpineci B, Tolbert L, Islam SK, Hasanuzzaman M. Effect of silicon carbide (SiC) power devices on HEV PWM inverter loss. In: 27th Annual Conference of the IEEE Industrial Electronics Society; 2001. p. 1061-66.
12. Ozpineci B., Tolbert L., Islam S.K., Hasanuzzaman M. System impact of silicon carbide devices. Int. J. High Speed Electron Syst. 12(2):2002;439-448.
13. Rebello N.S., Shoucair F.S., Palmour J.W. 6H silicon carbide MOSFET modeling for high temperature analogue integrated circuits (25-500 °C). IEE Proc.-Circuits Devices Syst. 143(2):1996;115-122.
14. Ryu S-H. Development of CMOS Technology for Smart Power Applications in Silicon Carbide. PhD thesis, Purdue University, May 1997.
15. Casey H.C. Devices for integrated circuits, silicon and III-V compound semiconductors. 1999;John Wiley & Sons, New York.
16. Levinshtein M.E., Rumuantsev S.L., Shur M.S. Properties of advanced semiconductor materials. 2001;John Wiley & Sons, The UK.
17. 2/SiC metal-oxide semiconductor interface. J. Electron. Mater. 24(4):1995;303-309.
18. Roschke M., Schwierz F. Electron mobility models for 4H, 6H, and 3C-SiC. IEEE Trans. Electron Devices. 48(7):2001;1442-1447.