메뉴 건너뛰기




Volumn 1, Issue 1, 2007, Pages

Order of epitaxial self-assembled quantum dots: Linear analysis

Author keywords

Epitaxial growth; Quantum dots; Semiconductors; Strained films

Indexed keywords

EPITAXIAL GROWTH; NANOCRYSTALS; QUANTUM DOT LASERS; RANDOM PROCESSES; SEMICONDUCTOR MATERIALS; STOCHASTIC SYSTEMS;

EID: 36148968541     PISSN: None     EISSN: 19342608     Source Type: Journal    
DOI: 10.1117/1.2753144     Document Type: Article
Times cited : (4)

References (67)
  • 3
    • 0033347677 scopus 로고    scopus 로고
    • The present status of quantum dot lasers
    • [doi:10.1016/S1386-9477(99)00041-7]
    • M. Grundmann, "The present status of quantum dot lasers," Physica E 5, 167-184 (2000) [doi:10.1016/S1386-9477(99)00041-7].
    • (2000) Physica e , vol.5 , pp. 167-184
    • Grundmann, M.1
  • 4
    • 0035337918 scopus 로고    scopus 로고
    • Epitaxially self-assembled quantum dots
    • (May) [doi:10.1063/1.1381102]
    • P. M. Petroff, A. Lorke, and A. Imamoglu, "Epitaxially self-assembled quantum dots," Phys. Today, 46-52 (May, 2001) [doi:10.1063/1.1381102].
    • (2001) Phys. Today , pp. 46-52
    • Petroff, P.M.1    Lorke, A.2    Imamoglu, A.3
  • 5
    • 0000972998 scopus 로고    scopus 로고
    • High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm
    • DOI 10.1063/1.1415416
    • H.-Y. Liu, B. Xu, Y.-Q. Wei, D. Ding, J.-J. Qian, Q. Han, J.-B. Liang, and Z.-G. Wang, "High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm," Appl. Phys. Lett. 79(18), 2868-2870 (2001) [doi:10.1063/1.1415416]. (Pubitemid 33608082)
    • (2001) Applied Physics Letters , vol.79 , Issue.18 , pp. 2868-2870
    • Liu, H.-Y.1    Xu, B.2    Wei, Y.-Q.3    Ding, D.4    Qian, J.-J.5    Han, Q.6    Liang, J.-B.7    Wang, Z.-G.8
  • 6
    • 0031558192 scopus 로고    scopus 로고
    • Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
    • F. Heinrichsdorff, M. Mao, N. Kirstaedter, A. Krost, D. Bimberg, A. O. Kosogov, and P.Werner, "Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 71(1), 22-24 (1997) [doi:10.1063/1.120556]. (Pubitemid 127608474)
    • (1997) Applied Physics Letters , vol.71 , Issue.1 , pp. 22-24
    • Heinrichsdorff, F.1    Mao, M.-H.2    Kirstaedter, N.3    Krost, A.4    Bimberg, D.5    Kosogov, A.O.6    Werner, P.7
  • 7
    • 0036641330 scopus 로고    scopus 로고
    • Quantum-dot vertical-cavity surface-emitting laser
    • D. Bimberg, N. Ledentsov, and J. Lott, "Quantum-dot vertical-cavity surface-emitting laser," MRS Bull. 27(7), 531-537 (2002).
    • (2002) MRS Bull. , vol.27 , Issue.7 , pp. 531-537
    • Bimberg, D.1    Ledentsov, N.2    Lott, J.3
  • 8
    • 0036765635 scopus 로고    scopus 로고
    • Long-wavelength quantum-dot lasers on GaAs substrates: From media to device concepts
    • [doi:10.1109/JSTQE.2002.804236]
    • N. N. Ledentsov, "Long-wavelength quantum-dot lasers on GaAs substrates: From media to device concepts," IEEE J. Sel. Top. Quant. Electron. 8, 1015-1024 (2002) [doi:10.1109/JSTQE.2002.804236].
    • (2002) IEEE J. Sel. Top. Quant. Electron. , vol.8 , pp. 1015-1024
    • Ledentsov, N.N.1
  • 10
    • 0037254303 scopus 로고    scopus 로고
    • Fabrication of a farinfrared photodetector based on InAs/GaAs quantum-dot superlattices
    • [doi:10.1117/1.1525277]
    • Y.-C. Cheng, S. Yang, J.-N. Yang, L.-B. Chang, and L.-Z. Hsieh, "Fabrication of a farinfrared photodetector based on InAs/GaAs quantum-dot superlattices," Opt. Eng. 42(1), 119-123 (2003) [doi:10.1117/1.1525277].
    • (2003) Opt. Eng. , vol.42 , Issue.1 , pp. 119-123
    • Cheng, Y.-C.1    Yang, S.2    Yang, J.-N.3    Chang, L.-B.4    Hsieh, L.-Z.5
  • 11
    • 0037380475 scopus 로고    scopus 로고
    • Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3 μm
    • [doi:10.1016/S0022-0248(02)02385-0]
    • R. Krebs, S. Deubert, J. Reithmaier, and A. Forchel, "Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3 μm," J. Cryst. Growth 251, 742-747 (2003) [doi:10.1016/S0022-0248(02)02385-0].
    • (2003) J. Cryst. Growth , vol.251 , pp. 742-747
    • Krebs, R.1    Deubert, S.2    Reithmaier, J.3    Forchel, A.4
  • 12
    • 0037382515 scopus 로고    scopus 로고
    • Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxy
    • [doi:10.1016/S0022-0248(03)00831-5]
    • H. Sakaki, "Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxy," J. Cryst. Growth 251, 9-16 (2003) [doi:10.1016/S0022-0248(03)00831-5].
    • (2003) J. Cryst. Growth , vol.251 , pp. 9-16
    • Sakaki, H.1
  • 13
    • 36448998842 scopus 로고
    • Photoluminescence and electroluminescence of SiGe dots fabricated by island growth
    • [doi:10.1063/1.114051]
    • R. Apetz, L. Vescan, A. Hartmann, C. Dieker, and H. Luth, "Photoluminescence and electroluminescence of SiGe dots fabricated by island growth," Appl. Phys. Lett. 66(4), 445-447 (1995) [doi:10.1063/1.114051].
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.4 , pp. 445-447
    • Apetz, R.1    Vescan, L.2    Hartmann, A.3    Dieker, C.4    Luth, H.5
  • 14
    • 0032321274 scopus 로고    scopus 로고
    • Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition
    • PII S0040609098012814
    • P. Boucaud, V. Le Thanh, S. Sauvage, D. Debarre, D. Bouchier, and J. M. Lourtioz, "Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition," Thin Solid Films 336(1-2), 240-243 (1998) [doi:10.1016/S0040-6090(98)01281-4]. (Pubitemid 128411685)
    • (1998) Thin Solid Films , vol.336 , Issue.1-2 , pp. 240-243
    • Boucaud, P.1    Le Thanh, V.2    Sauvage, S.3    Debarre, D.4    Bouchier, D.5    Lourtioz, J.-M.6
  • 17
    • 0031546346 scopus 로고    scopus 로고
    • Room-temperature luminescence from SiGe self-organized dots
    • PII S0022024896004678
    • H. Chen, W. Q. Cheng, X. G. Xie, Q. Huang, and J. M. Zhou, "Room-temperature luminescence from SiGe self-organized dots," J. Cryst. Growth 171(1-2), 61-64 (1997) [doi:10.1016/S0022-0248(96)00467-8]. (Pubitemid 127398383)
    • (1997) Journal of Crystal Growth , vol.171 , Issue.1-2 , pp. 61-64
    • Chen, H.1    Cheng, W.Q.2    Xie, X.G.3    Huang, Q.4    Zhou, J.M.5
  • 18
    • 33846321604 scopus 로고    scopus 로고
    • Effect of Si-spacer thickness on optical properties of multistacked Ge quantum dots grown by rapid thermal chemical vapor deposition
    • [doi:10.1063/1.2402590]
    • C. J. Park, W.-C. Yang, H. Y. Cho, M. C. Kim, S. Kim, and S.-H. Choi, "Effect of Si-spacer thickness on optical properties of multistacked Ge quantum dots grown by rapid thermal chemical vapor deposition," J. Appl. Phys. 101(1), 014304 (2007) [doi:10.1063/1.2402590].
    • (2007) J. Appl. Phys. , vol.101 , Issue.1 , pp. 014304
    • Park, C.J.1    Yang, W.-C.2    Cho, H.Y.3    Kim, M.C.4    Kim, S.5    Choi, S.-H.6
  • 19
    • 20444477540 scopus 로고    scopus 로고
    • The evolution of electroluminescence in Ge quantum-dot diodes with the fold number
    • DOI 10.1063/1.1842371
    • Y. H. Peng, C.-H. Hsu, C. H. Kuan, C. W. Liu, P. S. Chen, M.-J. Tsai, and Y. W. Suen, "The evolution of electroluminescence in Ge quantum-dot diodes with the fold number," Appl. Phys. Lett. 85(25), 6107-6109 (2004) [doi:10.1063/1.1842371]. (Pubitemid 40817849)
    • (2004) Applied Physics Letters , vol.85 , Issue.25 , pp. 6107-6109
    • Peng, Y.H.1    Hsu, C.-H.2    Kuan, C.H.3    Liu, C.W.4    Chen, P.S.5    Tsai, M.-J.6    Suen, Y.W.7
  • 20
    • 0038318899 scopus 로고    scopus 로고
    • Electroluminescence of self-assembled Ge hut clusters
    • [doi:10.1063/1.1572479]
    • M. Stoffel, U. Denker, and O. G. Schmidt, "Electroluminescence of self-assembled Ge hut clusters," Appl. Phys. Lett. 82(19), 3236-3238 (2003) [doi:10.1063/1.1572479].
    • (2003) Appl. Phys. Lett. , vol.82 , Issue.19 , pp. 3236-3238
    • Stoffel, M.1    Denker, U.2    Schmidt, O.G.3
  • 22
    • 0001693375 scopus 로고
    • Morphological instability in epitaxially strained dislocation-free films
    • [doi:10.1103/PhysRevLett.67.3696]
    • B. J. Spencer, P. W. Voorhees, and S. H. Davis, "Morphological instability in epitaxially strained dislocation-free films," Phys. Rev. Lett. 67(26), 3696-3699 (1991) [doi:10.1103/PhysRevLett.67.3696].
    • (1991) Phys. Rev. Lett. , vol.67 , Issue.26 , pp. 3696-3699
    • Spencer, B.J.1    Voorhees, P.W.2    Davis, S.H.3
  • 23
    • 0036152574 scopus 로고    scopus 로고
    • Si/ge nanostructures
    • [doi:10.1088/0034-4885/65/1/202]
    • K. Brunner, "Si/ge nanostructures," Rep. Prog. Phys. 65(1), 27-72 (2002) [doi:10.1088/0034-4885/65/1/202].
    • (2002) Rep. Prog. Phys. , vol.65 , Issue.1 , pp. 27-72
    • Brunner, K.1
  • 26
    • 34248585296 scopus 로고    scopus 로고
    • Simulation of thermal-field directed self-assembly of epitaxial quantum dots
    • [doi:10.1063/1.2723871]
    • C. Kumar and L. H. Friedman, "Simulation of thermal-field directed self-assembly of epitaxial quantum dots," J. Appl. Phys. 101(9), 094903 (2007) [doi:10.1063/1.2723871].
    • (2007) J. Appl. Phys. , vol.101 , Issue.9 , pp. 094903
    • Kumar, C.1    Friedman, L.H.2
  • 27
    • 33644680543 scopus 로고    scopus 로고
    • Feasibility study for thermal-field directed selfassembly of heteroepitaxial quantum dots
    • [doi:10.1063/1.2179109]
    • L. H. Friedman and J. Xu, "Feasibility study for thermal-field directed selfassembly of heteroepitaxial quantum dots," Appl. Phys. Lett. 88, 093105 (2006) [doi:10.1063/1.2179109].
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 093105
    • Friedman, L.H.1    Xu, J.2
  • 28
    • 0000651197 scopus 로고    scopus 로고
    • Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 m
    • S. Krishna, D. Zhu, J. Xu, and P. Bhattacharya, "Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm," J. Appl. Phys. 86, 6135-6138 (1999) [doi:10.1063/1.371664]. (Pubitemid 129647824)
    • (1999) Journal of Applied Physics , vol.86 , Issue.11 , pp. 6135-6138
    • Krishna, S.1    Zhu, D.2    Xu, J.3    Linder, K.K.4    Qasaimeh, O.5    Bhattacharya, P.6    Huffaker, D.L.7
  • 30
    • 28344457103 scopus 로고    scopus 로고
    • Patterning of sub-10nm Ge islands on Si(100) by directed self-assembly
    • [doi:10.1063/1.2112198]
    • O. Guise, J. J. T. Yates, J. Levy, J. Ahner, V. Vaithyanathan, and D. G. Schlom, "Patterning of sub-10nm Ge islands on Si(100) by directed self-assembly," Appl. Phys. Lett. 87, 171902 (2005) [doi:10.1063/1.2112198] .
    • (2005) Appl. Phys. Lett. , vol.87 , pp. 171902
    • Guise, O.1    Yates, J.J.T.2    Levy, J.3    Ahner, J.4    Vaithyanathan, V.5    Schlom, D.G.6
  • 31
    • 33750603850 scopus 로고    scopus 로고
    • Level set simulation of directed self-assembly during epitaxial growth
    • [doi:10.1103/PhysRevB.74.193403]
    • X. Niu, R. Vardavas, R. E. Caflisch, and C. Ratsch, "Level set simulation of directed self-assembly during epitaxial growth," Phys. Rev. B 74, 193403 (2006) [doi:10.1103/PhysRevB.74.193403].
    • (2006) Phys. Rev. B , vol.74 , pp. 193403
    • Niu, X.1    Vardavas, R.2    Caflisch, R.E.3    Ratsch, C.4
  • 33
    • 34247847731 scopus 로고    scopus 로고
    • Anisotropy and order of epitaxial self-assembled quantum dots
    • [doi:10.1103/PhysRevB.75.193302]
    • L. H. Friedman, "Anisotropy and order of epitaxial self-assembled quantum dots," Phys. Rev. B 75(19), 193302 (2007) [doi:10.1103/PhysRevB.75. 193302].
    • (2007) Phys. Rev. B , vol.75 , Issue.19 , pp. 193302
    • Friedman, L.H.1
  • 34
    • 0000539366 scopus 로고    scopus 로고
    • Directional dependence of surface morphological stability of heteroepitaxial layers
    • Y. Obayashi and K. Shintani, "Directional dependence of surface morphological stability of heteroepitaxial layers," J. Appl. Phys. 84(6), 3141-3146 (1998) [doi:10.1063/1.368468]. (Pubitemid 128580938)
    • (1998) Journal of Applied Physics , vol.84 , Issue.6 , pp. 3141-3146
    • Obayashi, Y.1    Shintani, K.2
  • 35
    • 0032646147 scopus 로고    scopus 로고
    • Stress-driven surface evolution in heteroepitaxial thin films: Anisotropy of the two-dimensional roughening mode
    • [doi:10.1557/JMR.1999.0439]
    • C. S. Ozkan, W. D. Nix, and H. J. Gao, "Stress-driven surface evolution in heteroepitaxial thin films: Anisotropy of the two-dimensional roughening mode," J. Mater. Res. 14, 3247-3256 (1999) [doi:10.1557/JMR. 1999.0439].
    • (1999) J. Mater. Res. , vol.14 , pp. 3247-3256
    • Ozkan, C.S.1    Nix, W.D.2    Gao, H.J.3
  • 36
    • 3343007423 scopus 로고
    • Competing relaxation mechanisms in strained layers
    • J. Tersoff and F. K. LeGoues, "Competing relaxation mechanisms in strained layers," Phys. Rev. Lett. 72, 3570-3573 (1994) [doi:10.1103/PhysRevLett.72.3570]. (Pubitemid 24975474)
    • (1994) Physical Review Letters , vol.72 , Issue.22 , pp. 3570-3573
    • Tersoff, J.1    LeGoues, F.K.2
  • 37
    • 36449004985 scopus 로고
    • Morphological instability in epitaxially strained dislocation-free solid films: Linear stability theory
    • [doi: 10.1063/1.353815]
    • B. J. Spencer, P. W. Voorhees, and S. H. Davis, "Morphological instability in epitaxially strained dislocation-free solid films: Linear stability theory," J. Appl. Phys. 73(10), 4955-4970 (1993) [doi: 10.1063/1.353815].
    • (1993) J. Appl. Phys. , vol.73 , Issue.10 , pp. 4955-4970
    • Spencer, B.J.1    Voorhees, P.W.2    Davis, S.H.3
  • 38
    • 32644450889 scopus 로고    scopus 로고
    • Ge dots and nanostructures grown epitaxially on Si
    • DOI 10.1088/0953-8984/18/8/R01, PII S0953898406897377
    • J. M. Baribeau, X. Wu, N. L. Rowell, and D. J. Lockwood, "Ge dots and nanostructures grown epitaxially on Si," J. Phys.-Condens. Mat. 18, R139-R174 (2006) [doi:10.1088/0953-8984/18/8/R01]. (Pubitemid 43239529)
    • (2006) Journal of Physics Condensed Matter , vol.18 , Issue.8
    • Baribeau, J.-M.1    Wu, X.2    Rowell, N.L.3    Lockwood, D.J.4
  • 39
    • 0024611337 scopus 로고
    • On the stability of surfaces of stressed solids
    • [doi:10.1016/0001-6160(89)90246-0]
    • D. J. Srolovitz, "On the stability of surfaces of stressed solids," Acta Metall. 37(2), 621-625 (1989) [doi:10.1016/0001-6160(89) 90246-0].
    • (1989) Acta Metall. , vol.37 , Issue.2 , pp. 621-625
    • Srolovitz, D.J.1
  • 40
    • 6744224411 scopus 로고    scopus 로고
    • Surface roughening of heteroepitaxial thin films
    • [doi:10.1146/annurev.matsci.29.1.173]
    • H. J. Gao and W. D. Nix, "Surface roughening of heteroepitaxial thin films," Annu. Rev. Mater. Sci. 29, 173-209 (1999) [doi:10.1146/annurev. matsci.29.1.173].
    • (1999) Annu. Rev. Mater. Sci. , vol.29 , pp. 173-209
    • Gao, H.J.1    Nix, W.D.2
  • 41
    • 0001329154 scopus 로고    scopus 로고
    • Nucleationless three-dimensional island formation in low-misfit heteroepitaxy
    • [doi:10.1103/PhysRevLett.84.4637]
    • P. Sutter and M. G. Lagally, "Nucleationless three-dimensional island formation in low-misfit heteroepitaxy," Phys. Rev. Lett. 84(20), 4637-4640 (2000) [doi:10.1103/PhysRevLett.84.4637].
    • (2000) Phys. Rev. Lett. , vol.84 , Issue.20 , pp. 4637-4640
    • Sutter, P.1    Lagally, M.G.2
  • 42
    • 0942300140 scopus 로고    scopus 로고
    • Self-organization of quantum dots in epitaxially strained solid films
    • [doi:10.1103/PhysRevE.68.056203]
    • A. A. Golovin, S. H. Davis, and P. W. Voorhees, "Self-organization of quantum dots in epitaxially strained solid films," Phys. Rev. E 68, 056203 (2003) [doi:10.1103/PhysRevE.68.056203].
    • (2003) Phys. Rev. e , vol.68 , pp. 056203
    • Golovin, A.A.1    Davis, S.H.2    Voorhees, P.W.3
  • 44
    • 0038750611 scopus 로고    scopus 로고
    • Morphological evolution of SiGe layers
    • [doi:10.1016/S0039-6028(03)00488-6]
    • I. Berbezier, A. Ronda, F. Volpi, and A. Portavoce, "Morphological evolution of SiGe layers," Surf. Sci. 531, 231-243 (2003) [doi:10.1016/S0039-6028(03)00488-6].
    • (2003) Surf. Sci. , vol.531 , pp. 231-243
    • Berbezier, I.1    Ronda, A.2    Volpi, F.3    Portavoce, A.4
  • 46
    • 17744413085 scopus 로고    scopus 로고
    • Formation of self-assembled heteroepitaxial islands in elastically anisotropic films
    • [doi: 10.1103/Phys-RevB.67.165414]
    • P. Liu, Y. W. Zhang, and C. Lu, "Formation of self-assembled heteroepitaxial islands in elastically anisotropic films," Phys. Rev. B 67, 165414 (2003) [doi: 10.1103/Phys-RevB.67.165414].
    • (2003) Phys. Rev. B , vol.67 , pp. 165414
    • Liu, P.1    Zhang, Y.W.2    Lu, C.3
  • 47
    • 0037460303 scopus 로고    scopus 로고
    • Morphological evolution driven by strain induced surface diffusion
    • [doi:10.1016/S0040-6090(02)00897-0]
    • Y. Zhang, A. Bower, and P. Liu, "Morphological evolution driven by strain induced surface diffusion," Thin Solid Films 424, 9-14 (2003) [doi:10.1016/S0040-6090(02)00897-0].
    • (2003) Thin Solid Films , vol.424 , pp. 9-14
    • Zhang, Y.1    Bower, A.2    Liu, P.3
  • 48
    • 0344874711 scopus 로고    scopus 로고
    • Phase field microelasticity modeling of surface instability of heteroepitaxial thin films
    • [doi:10.1016/j.actamat.2003.08.027]
    • Y. U. Wang, Y. M. Jin, and A. G. Khachaturyan, "Phase field microelasticity modeling of surface instability of heteroepitaxial thin films," Acta Mater. 52, 81-92 (2004) [doi:10.1016/j.actamat.2003.08.027].
    • (2004) Acta Mater. , vol.52 , pp. 81-92
    • Wang, Y.U.1    Jin, Y.M.2    Khachaturyan, A.G.3
  • 49
    • 9944259108 scopus 로고    scopus 로고
    • Evolution equation for a thin epitaxial film on a deformable substrate
    • [doi:10.1063/1.1766084]
    • W. T. Tekalign and B. J. Spencer, "Evolution equation for a thin epitaxial film on a deformable substrate," J. Appl. Phys. 96(10), 5505-5512 (2004) [doi:10.1063/1.1766084].
    • (2004) J. Appl. Phys. , vol.96 , Issue.10 , pp. 5505-5512
    • Tekalign, W.T.1    Spencer, B.J.2
  • 50
    • 42749104249 scopus 로고    scopus 로고
    • Surface energetics and structure of the Ge wetting layer on Si(100)
    • [doi:10.1103/PhysRevB.70.205337]
    • M. J. Beck, A. van de Walle, and M. Asta, "Surface energetics and structure of the Ge wetting layer on Si(100)," Phys. Rev. B 70, 205337 (2004) [doi:10.1103/PhysRevB.70.205337].
    • (2004) Phys. Rev. B , vol.70 , pp. 205337
    • Beck, M.J.1    Van De Walle, A.2    Asta, M.3
  • 51
    • 42749098986 scopus 로고    scopus 로고
    • Origin of apparent critical thickness for island formation in heteroepitaxy
    • [doi:10.1103/PhysRevLett.93.216101]
    • Y. H. Tu and J. Tersoff, "Origin of apparent critical thickness for island formation in heteroepitaxy," Phys. Rev. Lett. 93, 216101 (2004) [doi:10.1103/PhysRevLett.93.216101].
    • (2004) Phys. Rev. Lett. , vol.93 , pp. 216101
    • Tu, Y.H.1    Tersoff, J.2
  • 52
    • 0032614165 scopus 로고    scopus 로고
    • Strain induced vertical and lateral correlations in quantum dot superlattices
    • V. Holy, G. Springholz, M. Pinczolits, and G. Bauer, "Strain induced vertical and lateral correlations in quantum dot superlattices," Phys. Rev. Lett. 83(2), 356-359 (1999) [doi:10.1103/PhysRevLett.83.356]. (Pubitemid 129308634)
    • (1999) Physical Review Letters , vol.83 , Issue.2 , pp. 356-359
    • Holy, V.1    Springholz, G.2    Pinczolits, M.3    Bauer, G.4
  • 53
    • 18244416692 scopus 로고    scopus 로고
    • Three-dimensional finite-element simulations of the self-organized growth of quantum dot superlattices
    • [doi:10.1103/PhysRevB.68.195314]
    • P. Liu, Y. W. Zhang, and C. Lu, "Three-dimensional finite-element simulations of the self-organized growth of quantum dot superlattices," Phys. Rev. B 68, 195314 (2003) [doi:10.1103/PhysRevB.68.195314].
    • (2003) Phys. Rev. B , vol.68 , pp. 195314
    • Liu, P.1    Zhang, Y.W.2    Lu, C.3
  • 55
    • 9944255145 scopus 로고    scopus 로고
    • Coarsening kinetics of heteroepitaxial islands in nucleationless stranski-krastanov growth
    • [doi:10.1103/PhysRevB.68.035402]
    • P. Liu, Y. W. Zhang, and C. Lu, "Coarsening kinetics of heteroepitaxial islands in nucleationless stranski-krastanov growth," Phys. Rev. B 68, 035402 (2003) [doi:10.1103/PhysRevB.68.035402].
    • (2003) Phys. Rev. B , vol.68 , pp. 035402
    • Liu, P.1    Zhang, Y.W.2    Lu, C.3
  • 56
    • 4344708593 scopus 로고    scopus 로고
    • Coarsening of self-assembled Ge quantum dots on Si(001)
    • F. M. Ross, J. Tersoff, and R. M. Tromp, "Coarsening of self-assembled ge quantum dots on Si(001)," Phys. Rev. Lett. 80(5), 984-987 (1998) [doi:10.1103/PhysRevLett.80.984]. (Pubitemid 128622254)
    • (1998) Physical Review Letters , vol.80 , Issue.5 , pp. 984-987
    • Ross, F.M.1    Tersoff, J.2    Tromp, R.M.3
  • 57
    • 0042769306 scopus 로고    scopus 로고
    • Kinetic surface segregation and the evolution of nanostructures
    • [doi:10.1063/1.1592304]
    • J. Tersoff, "Kinetic surface segregation and the evolution of nanostructures," Appl. Phys. Lett. 83(2), 353-355 (2003) [doi:10.1063/1.1592304].
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.2 , pp. 353-355
    • Tersoff, J.1
  • 58
    • 20544463882 scopus 로고    scopus 로고
    • A spectral method for the nonconserved surface evolution of nanocrystalline gratings below the roughening transition
    • [doi: 10.1063/1.1897837]
    • A. Ramasubramaniam and V. B. Shenoy, "A spectral method for the nonconserved surface evolution of nanocrystalline gratings below the roughening transition," J. Appl. Phys. 97(11), 114312 (2005) [doi: 10.1063/1.1897837].
    • (2005) J. Appl. Phys. , vol.97 , Issue.11 , pp. 114312
    • Ramasubramaniam, A.1    Shenoy, V.B.2
  • 59
    • 0035971696 scopus 로고    scopus 로고
    • Three-dimensional analysis of shape transitions in strained- heteroepitaxial islands
    • DOI 10.1063/1.1354155
    • Y. W. Zhang and A. F. Bower, "Three-dimensional analysis of shape transitions in strained-heteroepitaxial islands," Appl. Phys. Lett. 78(18), 2706-2708 (2001) [doi:10.1063/1.1354155]. (Pubitemid 33611419)
    • (2001) Applied Physics Letters , vol.78 , Issue.18 , pp. 2706-2708
    • Zhang, Y.W.1    Bower, A.F.2
  • 61
    • 13944277600 scopus 로고    scopus 로고
    • Faceting instability in the presence of wetting interactions: A mechanism for the formation of quantum dots
    • [doi:10.1103/PhysRevB.70.235342]
    • A. A. Golovin, M. S. Levine, T. V. Savina, and S. H. Davis, "Faceting instability in the presence of wetting interactions: A mechanism for the formation of quantum dots," Phys. Rev. B 70, 235342 (2004) [doi:10.1103/PhysRevB.70.235342].
    • (2004) Phys. Rev. B , vol.70 , pp. 235342
    • Golovin, A.A.1    Levine, M.S.2    Savina, T.V.3    Davis, S.H.4
  • 62
    • 33744527917 scopus 로고    scopus 로고
    • InGaAs quantum dots grown on B-type high index GaAs substrates: Surface morphologies and optical properties
    • DOI 10.1088/0957-4484/17/11/004, PII S0957448406183622
    • B. L. Liang, Z. M. Wang, Y. I. Mazur, V. V. Strelchuck, K. Holmes, J. H. Lee, and G. J. Salamo, "InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties," Nanotechnology 17(11), 2736-2740 (2006) [doi:10.1088/0957-4484/17/11/004]. (Pubitemid 43814922)
    • (2006) Nanotechnology , vol.17 , Issue.11 , pp. 2736-2740
    • Liang, B.L.1    Wang, Zh.M.2    Mazur, Yu.I.3    Strelchuck, V.V.4    Holmes, K.5    Lee, J.H.6    Salamo, G.J.7
  • 63
    • 0037626886 scopus 로고    scopus 로고
    • Control of strain-mediated growth kinetics of self-assembled semiconductor quantum dots
    • [doi: 10.1103/PhysRevB.67.195301]
    • M. Meixner, R. Kunert, and E. Scholl, "Control of strain-mediated growth kinetics of self-assembled semiconductor quantum dots," Phys. Rev. B 67, 195301 (2003) [doi: 10.1103/PhysRevB.67.195301].
    • (2003) Phys. Rev. B , vol.67 , pp. 195301
    • Meixner, M.1    Kunert, R.2    Scholl, E.3
  • 66
    • 12044252828 scopus 로고
    • Pattern formation outside equilibrium
    • [doi:10.1103/RevModPhys.65.851]
    • M. C. Cross and P. C. Hohenberg, "Pattern formation outside equilibrium," Rev. Mod. Phys. 65(3), 851-1112 (1993) [doi:10.1103/ RevModPhys.65.851].
    • (1993) Rev. Mod. Phys. , vol.65 , Issue.3 , pp. 851-1112
    • Cross, M.C.1    Hohenberg, P.C.2
  • 67
    • 0000292637 scopus 로고
    • Morphological instability in epitaxially strained dislocation-free solid films: Nonlinear evolution
    • [doi:10.1103/PhysRevB.47.9760]
    • B. J. Spencer, S. H. Davis, and P. W. Voorhees, "Morphological instability in epitaxially strained dislocation-free solid films: Nonlinear evolution," Phys. Rev. Lett. 47(15), 9760-9777 (1993) [doi:10.1103/ PhysRevB.47.9760].
    • (1993) Phys. Rev. Lett. , vol.47 , Issue.15 , pp. 9760-9777
    • Spencer, B.J.1    Davis, S.H.2    Voorhees, P.W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.