Precision placement of heteroepitaxial semiconductor quantum dots

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 1-8

  Hull, R ^a   Gray, J L ^a   Kammler, M ^a,c   Vandervelde, T ^a   Kobayashi, T ^a   Kumar, P ^a   Pernell, T ^a   Bean, J C ^a   Floro, J A ^b   Ross, F M ^c  

^a University of Virginia   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Controlled nucleation; Molecular beam epitaxy; Quantum fortress; Strain relaxation; Strained layer epitaxy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); FILM GROWTH; LATTICE CONSTANTS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NUCLEATION; REACTION KINETICS; SEMICONDUCTING SILICON; STRAIN; SURFACE ROUGHNESS; TUNNEL JUNCTIONS;

CONTROLLED NUCLEATION; QUANTUM FORTRESS; STRAIN RELAXATION; STRAINED LAYER EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 12144287519     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00680-3     Document Type: Conference Paper

References (41)

1. Tersoff J. Phys. Rev. Lett. 74:1995;4962.
2. Teichert C., Lagally M.G., Peticolas L.J., Bean J.C., Tersoff J. Phys. Rev. B. 53:1996;16334.
3. Bernstein G., Bazan C., Chen M., Lent C.S., Merz J.L., Orlov A.O., Porod W., Snider G.L., Tougaw P.D. Superlattices Microstruct. 20:1996;447.
4. G.L. Snider, A.O. Orlov, R.V. Kummamuru, R. Ramasubramanian, I. Amlani, G.H. Bernstein, C.S. Lent, in: E.A. Stach, E.H. Chason, R. Hull, S.D. Bader (Eds.), Mater. Res. Soc. Symp. Proc., Vol. 696, Materials Research Society, Warrendale, PA, 2002, p. 221.
5. Nitta Y., Shibata M., Fujita K., Ichikawa M. Surf. Sci. 462:2000;L587.
6. (a) Kamins T.I., Williams R.S. Appl. Phys. Lett. 71:1997;1201.
7. (b) Kamins T.I., Ohlberg D.A.A., Williams R.S., Zhang W., Chou S.Y. Appl. Phys. Lett. 74:1999;1773.
8. Jin G., Wan J., Luo Y.H., Liu J.L., Wang K.L. J. Cryst. Growth. 227-228:2001;1100.
9. Kamins T.I., Ohlberg D.A.A., Williams R.S., Zhang W., Chou S.Y. Appl. Phys. Lett. 74:1999;1773.
10. T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, D. Bottomley, A. Kaneko, F. Ling, Z. Zhang, M.P. Halsa, Abstract S-VIII.1, European MRS Meeting, Strasbourg, France, June 2002.
11. (a) Matthews J.W., Blakeslee A.E. J. Cryst. Growth. 27:1974;118.
12. (b) Matthews J.W., Blakeslee A.E. J. Cryst. Growth. 29:1975;373.
13. (c) Matthews J.W., Blakeslee A.E. J. Cryst. Growth. 32:1976;265.
14. Green M.L., Weir B.E., Brasen D., Hsieh Y.F., Higashi G., Feygenson A., Feldman L.C., Headrick R.L. J. Appl. Phys. 69:1991;745.
15. Houghton D.C., Gibbings C.J., Tuppen C.G., Lyons M.H., Halliwell M.A.G. Appl. Phys. Lett. 56:1990;460.
16. Bean J.C., Feldman L.C., Fiory A.T., Nakahara S., Robinson I.K. J. Vac. Sci. Technol. A. 2:1984;436.
17. Hull R., Bean J.C. Crit. Rev. Solid State Mater. Sci. 17:1992;507-546.
18. Eaglesham D.J., Cerullo M. Appl. Phys. Lett. 58:1991;2276.
19. Mo Y.-W., Savage D.E., Swartzentruber B.S., Lagally M.G. Phys. Rev. Lett. 65:1990;1020.
20. Tomitori M., Watanabe K., Kobayashi M., Nishikawa O. Appl. Surf. Sci. 76/77:1994;322.
21. Ross F.M., Tromp R.M., Reuter M.C. Science. 286:1999;1931.
22. Medeiros-Ribeiro G., Bratkovski A.M., Kamins T.I., Ohlberg D.A.A., Williams R.S. Science. 279:1998;353.
23. Floro J.A., Chason E., Freund L.B., Twesten R.D., Hwang R.Q., Lucadamo G.A. Phys. Rev. B. 59:1990;1999.
24. Tromp R.M., Ross F.M., Reuter M.C. Phys. Rev. Lett. 84:2000;4641.
25. Sutter P., Lagally M.G. Phys. Rev. Lett. 84:2000;4637.
26. Hammar M., LeGoues F.K., Tersoff J., Reuter M.C., Tromp R.M. Surf. Sci. 349:1995;129.
27. FEI Company, 7451 NW Evergreen Parkway, Hillsboro, OR.
28. Ross F.M., Tersoff J., Reuter M.C., LeGoues F.K., Tromp R.M. Microsc. Res. Tech. 42:1998;281.
29. Stach E.A., Hull R., Tromp R., Reuter M., Copel M., LeGoues F., Bean J. J. Appl. Phys. 83:1998;1931.
30. Floro J.A., Chason E. Mater. Res. Soc. Symp. Proc. 406:1996;491.
31. Floro J.A., Chason E., Lee S.R., Twesten R.D., Hwang R.Q., Freund L.B. J. Electron. Mater. 26:1997;983.
32. A. Ishizaka, K. Nakagawa, Y. Shiraki, in: Proceedings of the Second International Symposium on MBE, Jpn. Soc. Appl. Phys., Tokyo, Japan, 1982, pp. 183-186.
33. D.A. Glocker, S.I. Shah (Eds.), Handbook of Thin Film Process Technology, Institute of Physics Publishing, Bristol, UK, 1995, pp. E1.0:8 (see, for example).
34. (a) Pellerin J.G., Griffis D.P., Russell P.E. J. Vac. Sci. Technol. B. 8:1945;1990. (see, for example).
35. (b) Lehrer C., Frey L., Petersen S., Ryssel H. J. Vac. Sci. Technol. B. 19:2001;2533. (see, for example).
36. M. Kammler, R. Hull, M.C. Reuter, F.M. Ross, Appl. Phys. Lett., in press.
37. Tanaka M., Furuya K., Saito T. Nucl. Instrum. Meth. Phys. Res. B. 127/128:1997;98.
38. LeGoues F.K., Reuter M.C., Tersoff J., Hammar M., Tromp R.M. Phys. Rev. Lett. 73:1994;300.
39. Gray J., Hull R., Floro J. Appl. Phys. Lett. 81:2002;2445.
40. Jesson D.E., Chen K.M., Pennycook S.J., Thundat T., Warmack R.J. Phys. Rev. Lett. 77:1996;1330.
41. Deng X., Krishnamurthy M. Phys. Rev. Lett. 81:1998;1473.